All MOSFET. FRS430H Datasheet

 

FRS430H Datasheet and Replacement


   Type Designator: FRS430H
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 60 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.52 Ohm
   Package: TO257AA
 

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FRS430H Datasheet (PDF)

 8.1. Size:55K  intersil
 frs430.pdf pdf_icon

FRS430H

FRS430D, FRS430R,FRS430H3A, 500V, 2.52 Ohm, Rad Hard,June 1998 N-Channel Power MOSFETsFeatures Package 3A, 500V, RDS(on) = 2.52TO-257AA Second Generation Rad Hard MOSFET Results From New Design Concepts Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)- Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si)- Performance Permits Limited Use to 3000KRAD(Si)

Datasheet: FRS234R , FRS240D , FRS240H , FRS240R , FRS244D , FRS244H , FRS244R , FRS430D , RFP50N06 , FRS430R , FRS440D , FRS440H , FRS440R , FRS9130D , FRS9130H , FRS9130R , FRS9140D .

History: FQT3P20TF

Keywords - FRS430H MOSFET datasheet

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