FRS430H Specs and Replacement

Type Designator: FRS430H

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 50 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 60 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.52 Ohm

Package: TO257AA

FRS430H substitution

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FRS430H datasheet

 8.1. Size:55K  intersil
 frs430.pdf pdf_icon

FRS430H

FRS430D, FRS430R, FRS430H 3A, 500V, 2.52 Ohm, Rad Hard, June 1998 N-Channel Power MOSFETs Features Package 3A, 500V, RDS(on) = 2.52 TO-257AA Second Generation Rad Hard MOSFET Results From New Design Concepts Gamma - Meets Pre-Rad Specifications to 100KRAD(Si) - Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si) - Performance Permits Limited Use to 3000KRAD(Si) ... See More ⇒

Detailed specifications: FRS234R, FRS240D, FRS240H, FRS240R, FRS244D, FRS244H, FRS244R, FRS430D, IRF1407, FRS430R, FRS440D, FRS440H, FRS440R, FRS9130D, FRS9130H, FRS9130R, FRS9140D

Keywords - FRS430H MOSFET specs

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