UF9Z24 Datasheet and Replacement
Type Designator: UF9Z24
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 38 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 12 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 55 nS
Cossⓘ - Output Capacitance: 170 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.175 Ohm
Package: TO-220 TO-220F TO-252
UF9Z24 substitution
UF9Z24 Datasheet (PDF)
uf9z24.pdf

UNISONIC TECHNOLOGIES CO., LTD UF9Z24 Power MOSFET 12A, 55V P-CHANNEL POWER MOSFET 1 1TO-220FTO-220 DESCRIPTION The UTC UF9Z24 is a P-channel power MOSFET using UTCs advanced technology to provide the customers with high switching speed, cost-effectiveness and minimum on-state resistance. It can 11also withstand high energy in the avalanche. TO-220F2TO-220F1
Datasheet: UF8010 , UFZ44 , URFP150 , UT12N10 , UT2N10 , 12P10 , 7P20 , UF9640 , IRF640N , UT2955 , UTT120P06 , UTT12P10 , UTT16P10 , UTT18P10 , UTT25P10 , UTT50P10 , UTT70P10 .
History: TDM3412 | NVD4806N | SSF2437E | TPCA8008-H | CS5N65A3 | GSM6424 | NCE70N900I
Keywords - UF9Z24 MOSFET datasheet
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History: TDM3412 | NVD4806N | SSF2437E | TPCA8008-H | CS5N65A3 | GSM6424 | NCE70N900I



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