All MOSFET. UTT16P10 Datasheet

 

UTT16P10 Datasheet and Replacement


   Type Designator: UTT16P10
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 16 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 250 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.21 Ohm
   Package: TO-252
 

 UTT16P10 substitution

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UTT16P10 Datasheet (PDF)

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UTT16P10

UNISONIC TECHNOLOGIES CO., LTD UTT16P10 Preliminary Power MOSFET 100V, 16A P-CHANNEL POWER MOSFET DESCRIPTION 1The UTC UTT16P10 is a P-channel power MOSFET using UTCs TO-252advanced technology to provide the customers with high switching speed, cost-effectiveness and a minimum on-state resistance. It can also withstand high energy in the avalanche. FEATURES * RDS(

Datasheet: UT2N10 , 12P10 , 7P20 , UF9640 , UF9Z24 , UT2955 , UTT120P06 , UTT12P10 , AON6414A , UTT18P10 , UTT25P10 , UTT50P10 , UTT70P10 , UTT80P06 , UK4145 , UTT100N06 , UTT100N08 .

History: DMN6140L | FDFC2P100 | BUK9Y2R4-40H | QM4014D | NVMFS6H800NL | IRFS820B | AM3443C

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