All MOSFET. UTT16P10 Datasheet

 

UTT16P10 Datasheet and Replacement


   Type Designator: UTT16P10
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 16 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 250 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.21 Ohm
   Package: TO-252
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UTT16P10 Datasheet (PDF)

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UTT16P10

UNISONIC TECHNOLOGIES CO., LTD UTT16P10 Preliminary Power MOSFET 100V, 16A P-CHANNEL POWER MOSFET DESCRIPTION 1The UTC UTT16P10 is a P-channel power MOSFET using UTCs TO-252advanced technology to provide the customers with high switching speed, cost-effectiveness and a minimum on-state resistance. It can also withstand high energy in the avalanche. FEATURES * RDS(

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History: FDB3682 | IRLR024 | AON6794 | MC08N005C | QM3018D | CED05N8 | BL10N70-A

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