UTT16P10 Specs and Replacement

Type Designator: UTT16P10

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 150 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 16 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 25 nS

Cossⓘ - Output Capacitance: 250 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.21 Ohm

Package: TO-252

UTT16P10 substitution

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UTT16P10 datasheet

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 utt16p10.pdf pdf_icon

UTT16P10

UNISONIC TECHNOLOGIES CO., LTD UTT16P10 Preliminary Power MOSFET 100V, 16A P-CHANNEL POWER MOSFET DESCRIPTION 1 The UTC UTT16P10 is a P-channel power MOSFET using UTC s TO-252 advanced technology to provide the customers with high switching speed, cost-effectiveness and a minimum on-state resistance. It can also withstand high energy in the avalanche. FEATURES * RDS(... See More ⇒

Detailed specifications: UT2N10, 12P10, 7P20, UF9640, UF9Z24, UT2955, UTT120P06, UTT12P10, IRFB4227, UTT18P10, UTT25P10, UTT50P10, UTT70P10, UTT80P06, UK4145, UTT100N06, UTT100N08

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