UTT70P10 Specs and Replacement
Type Designator: UTT70P10
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 225 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 70 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 110 nS
Cossⓘ - Output Capacitance: 700 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
Package: TO-220
UTT70P10 substitution
- MOSFET ⓘ Cross-Reference Search
UTT70P10 datasheet
utt70p10.pdf
UNISONIC TECHNOLOGIES CO., LTD UTT70P10 Preliminary Power MOSFET 70A, 100V P-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT70P10 is a P-channel power MOSFET using UTC s advanced technology to provide the customers with high switching speed and a minimum on-state resistance. It can also withstand high energy in the avalanche. FEATURES * RDS(ON)=0.03 @ VGS=-10V, ID=-20A ... See More ⇒
Detailed specifications: UF9Z24, UT2955, UTT120P06, UTT12P10, UTT16P10, UTT18P10, UTT25P10, UTT50P10, IRFB4115, UTT80P06, UK4145, UTT100N06, UTT100N08, UTT10N10, UTT120N06, UTT150N06, UTT20N10
Keywords - UTT70P10 MOSFET specs
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