UTT70P10 Specs and Replacement

Type Designator: UTT70P10

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 225 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 70 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 110 nS

Cossⓘ - Output Capacitance: 700 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm

Package: TO-220

UTT70P10 substitution

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UTT70P10 datasheet

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utt70p10.pdf pdf_icon

UTT70P10

UNISONIC TECHNOLOGIES CO., LTD UTT70P10 Preliminary Power MOSFET 70A, 100V P-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT70P10 is a P-channel power MOSFET using UTC s advanced technology to provide the customers with high switching speed and a minimum on-state resistance. It can also withstand high energy in the avalanche. FEATURES * RDS(ON)=0.03 @ VGS=-10V, ID=-20A ... See More ⇒

Detailed specifications: UF9Z24, UT2955, UTT120P06, UTT12P10, UTT16P10, UTT18P10, UTT25P10, UTT50P10, IRFB4115, UTT80P06, UK4145, UTT100N06, UTT100N08, UTT10N10, UTT120N06, UTT150N06, UTT20N10

Keywords - UTT70P10 MOSFET specs

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