UTT70P10 Datasheet and Replacement
Type Designator: UTT70P10
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 225 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 70 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 110 nS
Cossⓘ - Output Capacitance: 700 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
Package: TO-220
UTT70P10 substitution
UTT70P10 Datasheet (PDF)
utt70p10.pdf

UNISONIC TECHNOLOGIES CO., LTD UTT70P10 Preliminary Power MOSFET 70A, 100V P-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT70P10 is a P-channel power MOSFET usingUTCs advanced technology to provide the customers with high switching speed and a minimum on-state resistance. It can also withstand high energy in the avalanche. FEATURES * RDS(ON)=0.03 @ VGS=-10V, ID=-20A
Datasheet: UF9Z24 , UT2955 , UTT120P06 , UTT12P10 , UTT16P10 , UTT18P10 , UTT25P10 , UTT50P10 , IRFP250N , UTT80P06 , UK4145 , UTT100N06 , UTT100N08 , UTT10N10 , UTT120N06 , UTT150N06 , UTT20N10 .
History: SML802R4BN | 3415
Keywords - UTT70P10 MOSFET datasheet
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History: SML802R4BN | 3415



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