UTT75N08 Specs and Replacement

Type Designator: UTT75N08

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 75 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 212 nS

Cossⓘ - Output Capacitance: 485 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.021 Ohm

Package: TO-220 TO-252 TO-220F1

UTT75N08 substitution

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UTT75N08 datasheet

 ..1. Size:156K  utc
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UTT75N08

UNISONIC TECHNOLOGIES CO., LTD UTT75N08 Preliminary Power MOSFET 75A, 80V N-CHANNEL POWERTRENCH MOSFET 1 TO-220 DESCRIPTION The UTC UTT75N08 is an N-channel enhancement MOSFET, it uses UTC s advanced technology to provide the customers with 1 perfect RDS(ON), high switching speed, high current capacity and low TO-220F1 gate charge. The UTC UTT75N08 is suitable for D... See More ⇒

 8.1. Size:164K  utc
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UTT75N08

UNISONIC TECHNOLOGIES CO., LTD UTT75N75 Preliminary Power MOSFET 80A, 75V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT75N75 is n-channel enhancement mode power field effect transistors with stable off-state characteristics including 1 fast switching speed and low thermal resistance. It is usually used TO-220 in the telecom and computer applications. FEATURES * RDS(O... See More ⇒

Detailed specifications: UTT25N08, UTT30N08, UTT30N10, UTT36N10, UTT50N06, UTT60N06, UTT60N10, UTT6N10, IRFP260, UTT75N75, UTT80N06, UTT80N08, UTT80N75, UDN302, UT2301, UT2301Z, UT2305

Keywords - UTT75N08 MOSFET specs

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