UTT75N08 Datasheet and Replacement
Type Designator: UTT75N08
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 75 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 212 nS
Cossⓘ - Output Capacitance: 485 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.021 Ohm
Package: TO-220 TO-252 TO-220F1
UTT75N08 substitution
UTT75N08 Datasheet (PDF)
utt75n08.pdf

UNISONIC TECHNOLOGIES CO., LTD UTT75N08 Preliminary Power MOSFET 75A, 80V N-CHANNEL POWERTRENCH MOSFET 1TO-220 DESCRIPTION The UTC UTT75N08 is an N-channel enhancement MOSFET, it uses UTCs advanced technology to provide the customers with 1perfect RDS(ON), high switching speed, high current capacity and low TO-220F1gate charge. The UTC UTT75N08 is suitable for D
utt75n75.pdf

UNISONIC TECHNOLOGIES CO., LTD UTT75N75 Preliminary Power MOSFET 80A, 75V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT75N75 is n-channel enhancement mode power field effect transistors with stable off-state characteristics including 1fast switching speed and low thermal resistance. It is usually used TO-220in the telecom and computer applications. FEATURES * RDS(O
Datasheet: UTT25N08 , UTT30N08 , UTT30N10 , UTT36N10 , UTT50N06 , UTT60N06 , UTT60N10 , UTT6N10 , 8205A , UTT75N75 , UTT80N06 , UTT80N08 , UTT80N75 , UDN302 , UT2301 , UT2301Z , UT2305 .
History: IPB45N04S4L-08
Keywords - UTT75N08 MOSFET datasheet
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History: IPB45N04S4L-08



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