UTT75N75 Datasheet and Replacement
Type Designator: UTT75N75
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 300 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 75 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 80 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 100 nS
Cossⓘ - Output Capacitance: 730 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
Package: TO-220
UTT75N75 substitution
UTT75N75 Datasheet (PDF)
utt75n75.pdf

UNISONIC TECHNOLOGIES CO., LTD UTT75N75 Preliminary Power MOSFET 80A, 75V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT75N75 is n-channel enhancement mode power field effect transistors with stable off-state characteristics including 1fast switching speed and low thermal resistance. It is usually used TO-220in the telecom and computer applications. FEATURES * RDS(O
utt75n08.pdf

UNISONIC TECHNOLOGIES CO., LTD UTT75N08 Preliminary Power MOSFET 75A, 80V N-CHANNEL POWERTRENCH MOSFET 1TO-220 DESCRIPTION The UTC UTT75N08 is an N-channel enhancement MOSFET, it uses UTCs advanced technology to provide the customers with 1perfect RDS(ON), high switching speed, high current capacity and low TO-220F1gate charge. The UTC UTT75N08 is suitable for D
Datasheet: UTT30N08 , UTT30N10 , UTT36N10 , UTT50N06 , UTT60N06 , UTT60N10 , UTT6N10 , UTT75N08 , 2SK3568 , UTT80N06 , UTT80N08 , UTT80N75 , UDN302 , UT2301 , UT2301Z , UT2305 , UT2305A .
History: HGT022N12S | TSM3548DCX6 | SSF2318E | RSS125N03FU6TB | BF1202 | SIHFBC30A | SM6107PSU
Keywords - UTT75N75 MOSFET datasheet
UTT75N75 cross reference
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History: HGT022N12S | TSM3548DCX6 | SSF2318E | RSS125N03FU6TB | BF1202 | SIHFBC30A | SM6107PSU



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