All MOSFET. UTT75N75 Datasheet

 

UTT75N75 Datasheet and Replacement


   Type Designator: UTT75N75
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 75 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 80 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 100 nS
   Cossⓘ - Output Capacitance: 730 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
   Package: TO-220
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UTT75N75 Datasheet (PDF)

 ..1. Size:164K  utc
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UTT75N75

UNISONIC TECHNOLOGIES CO., LTD UTT75N75 Preliminary Power MOSFET 80A, 75V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT75N75 is n-channel enhancement mode power field effect transistors with stable off-state characteristics including 1fast switching speed and low thermal resistance. It is usually used TO-220in the telecom and computer applications. FEATURES * RDS(O

 8.1. Size:156K  utc
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UTT75N75

UNISONIC TECHNOLOGIES CO., LTD UTT75N08 Preliminary Power MOSFET 75A, 80V N-CHANNEL POWERTRENCH MOSFET 1TO-220 DESCRIPTION The UTC UTT75N08 is an N-channel enhancement MOSFET, it uses UTCs advanced technology to provide the customers with 1perfect RDS(ON), high switching speed, high current capacity and low TO-220F1gate charge. The UTC UTT75N08 is suitable for D

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History: WMM11N80M3 | IRFI7536G | AON7240 | HGS120N10SL | FDMS9620S

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