All MOSFET. UDN302 Datasheet

 

UDN302 Datasheet and Replacement


   Type Designator: UDN302
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 2.4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 211 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.044 Ohm
   Package: SOT-23
 

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UDN302 Datasheet (PDF)

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UDN302

UNISONIC TECHNOLOGIES CO., LTD UDN302 Power MOSFET P-CHANNEL 2.5V SPECIFIED POWERTRENCH MOSFET DESCRIPTION The UDN302 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)=55m @ VGS=-4.5V * RDS(ON)=80m @ VGS=-2.

Datasheet: UTT60N06 , UTT60N10 , UTT6N10 , UTT75N08 , UTT75N75 , UTT80N06 , UTT80N08 , UTT80N75 , TK10A60D , UT2301 , UT2301Z , UT2305 , UT2305A , UT2311 , UT2321 , UT2327 , UT3419 .

History: BSZ440N10NS3G | TW1504ESG | AP9565AGJ-HF

Keywords - UDN302 MOSFET datasheet

 UDN302 cross reference
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