UDN302 Specs and Replacement

Type Designator: UDN302

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 2.4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11 nS

Cossⓘ - Output Capacitance: 211 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.044 Ohm

Package: SOT-23

UDN302 substitution

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UDN302 datasheet

 ..1. Size:201K  utc
 udn302.pdf pdf_icon

UDN302

UNISONIC TECHNOLOGIES CO., LTD UDN302 Power MOSFET P-CHANNEL 2.5V SPECIFIED POWERTRENCH MOSFET DESCRIPTION The UDN302 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)=55m @ VGS=-4.5V * RDS(ON)=80m @ VGS=-2.... See More ⇒

Detailed specifications: UTT60N06, UTT60N10, UTT6N10, UTT75N08, UTT75N75, UTT80N06, UTT80N08, UTT80N75, 13N50, UT2301, UT2301Z, UT2305, UT2305A, UT2311, UT2321, UT2327, UT3419

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