UT6302 MOSFET. Datasheet pdf. Equivalent
Type Designator: UT6302
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 0.54 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.5 V
|Id|ⓘ - Maximum Drain Current: 0.78 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 2.4 nC
trⓘ - Rise Time: 18 nS
Cossⓘ - Output Capacitance: 53 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm
Package: SOT-23 SOT-23-3
UT6302 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
UT6302 Datasheet (PDF)
ut6302.pdf
UNISONIC TECHNOLOGIES CO., LTD UT6302 Power MOSFET P-CHANNEL ENHANCEMENT MOSFET DESCRIPTION The UTC UT6302 is a power MOSFET offering the customersefficient and reliable performance. The UTC UT6302 is ideal for thin application environments, such as portable electronics and PCMCIA cards. FEATURES * Extremely-Low On-Resistance * Fast Switching Speed SYMBOL Drain (
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: SI5N60-TN3-R | PHW7N60E | SI4831BDY | SUM85N15-19 | 2SK2134
History: SI5N60-TN3-R | PHW7N60E | SI4831BDY | SUM85N15-19 | 2SK2134
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