UT6302 Specs and Replacement

Type Designator: UT6302

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.54 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 0.78 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 18 nS

Cossⓘ - Output Capacitance: 53 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm

Package: SOT-23 SOT-23-3

UT6302 substitution

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UT6302 datasheet

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UT6302

UNISONIC TECHNOLOGIES CO., LTD UT6302 Power MOSFET P-CHANNEL ENHANCEMENT MOSFET DESCRIPTION The UTC UT6302 is a power MOSFET offering the customers efficient and reliable performance. The UTC UT6302 is ideal for thin application environments, such as portable electronics and PCMCIA cards. FEATURES * Extremely-Low On-Resistance * Fast Switching Speed SYMBOL Drain (... See More ⇒

Detailed specifications: UT2301, UT2301Z, UT2305, UT2305A, UT2311, UT2321, UT2327, UT3419, NCEP15T14, 90N02, UK3018, UK3019, UK3919, UML2502, UP9T15G, UT2302, UT2304

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.