All MOSFET. UP9T15G Datasheet

 

UP9T15G Datasheet and Replacement


   Type Designator: UP9T15G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 12.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 12.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 55 nS
   Cossⓘ - Output Capacitance: 70 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
   Package: TO-251 TO-252
 

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UP9T15G Datasheet (PDF)

 ..1. Size:311K  utc
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UP9T15G

UNISONIC TECHNOLOGIES CO., LTD UP9T15G Power MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UP9T15G uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * VDS(V)=20V * ID=12 .5A (VGS=4.5V) * RDS(ON)

Datasheet: UT2327 , UT3419 , UT6302 , 90N02 , UK3018 , UK3019 , UK3919 , UML2502 , 18N50 , UT2302 , UT2304 , UT2306 , UT2308 , UT2312 , UT2316 , UT3055 , UT3400 .

History: APT12067B2LLG | IXFH12N120P | 2SJ409L | MPSW65M046CFD | STL8N65M5 | NCE50NF220K | APT20M40HVR

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