UP9T15G Specs and Replacement

Type Designator: UP9T15G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 12.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 12.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 55 nS

Cossⓘ - Output Capacitance: 70 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm

Package: TO-251 TO-252

UP9T15G substitution

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UP9T15G datasheet

 ..1. Size:311K  utc
 up9t15g.pdf pdf_icon

UP9T15G

UNISONIC TECHNOLOGIES CO., LTD UP9T15G Power MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UP9T15G uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * VDS(V)=20V * ID=12 .5A (VGS=4.5V) * RDS(ON)... See More ⇒

Detailed specifications: UT2327, UT3419, UT6302, 90N02, UK3018, UK3019, UK3919, UML2502, BS170, UT2302, UT2304, UT2306, UT2308, UT2312, UT2316, UT3055, UT3400

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