UTD351 Specs and Replacement

Type Designator: UTD351

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 1.4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 35 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.092 Ohm

Package: SOT-23

UTD351 substitution

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UTD351 datasheet

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UTD351

UNISONIC TECHNOLOGIES CO., LTD UTD351 Power MOSFET N-CHANNEL ENHANCEMENT MODE DESCRIPTION As N-Channel Logic Level MOSFET, UTD351 has been optimized for battery power management applications. And it s produced using UTC s Trench process. SYMBOL 3.Drain 2.Gate *Pb-free plating product number UTD351L 1.Source ORDERING INFORMATION Ordering Number Pin Assignment ... See More ⇒

Detailed specifications: UT3N01Z, UT4414, UT45N03, UT4800, UT50N03, UT6402, UT75N02, UT8205A, STP65NF06, UTD410, UTD452, UTM2054, UTM2513, UTN3055, UTP45N02, UTT200N02, UP2003

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.