UTD351 Datasheet and Replacement
Type Designator: UTD351
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 1.4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 8 nS
Cossⓘ - Output Capacitance: 35 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.092 Ohm
Package: SOT-23
UTD351 substitution
UTD351 Datasheet (PDF)
utd351.pdf

UNISONIC TECHNOLOGIES CO., LTD UTD351 Power MOSFET N-CHANNEL ENHANCEMENT MODE DESCRIPTION As N-Channel Logic Level MOSFET, UTD351 has been optimized for battery power management applications. And its produced using UTCs Trench process. SYMBOL 3.Drain2.Gate*Pb-free plating product number: UTD351L1.Source ORDERING INFORMATION Ordering Number Pin Assignment
Datasheet: UT3N01Z , UT4414 , UT45N03 , UT4800 , UT50N03 , UT6402 , UT75N02 , UT8205A , IRFZ48N , UTD410 , UTD452 , UTM2054 , UTM2513 , UTN3055 , UTP45N02 , UTT200N02 , UP2003 .
History: KQB6N25 | IPB34CN10N | FQD2N50TF | SSM3K04FS | AO6411 | P2610BT | DMN3035LWN
Keywords - UTD351 MOSFET datasheet
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History: KQB6N25 | IPB34CN10N | FQD2N50TF | SSM3K04FS | AO6411 | P2610BT | DMN3035LWN



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