UTD410 Specs and Replacement

Type Designator: UTD410

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3.7 nS

Cossⓘ - Output Capacitance: 57 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.048 Ohm

Package: SOT-223 TO-252

UTD410 substitution

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UTD410 datasheet

 ..1. Size:258K  utc
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UTD410

UNISONIC TECHNOLOGIES CO., LTD UTD410 Power MOSFET N-CHANNEL ENHANCEMENT MODE 1 DESCRIPTION SOT-223 The UTD410 can provide excellent RDS(ON) and low gate charge by using advanced trench technology. This UTD410 is suitable for using as a load switch or in PWM applications. FEATURES 1 * VDS=30V, ID=8A TO-252 * RDS(ON) =48m @VGS =10V SYMBOL ORDERING INFORMATI... See More ⇒

 9.1. Size:209K  utc
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UTD410

UNISONIC TECHNOLOGIES CO., LTD UTD413 Power MOSFET P-CHANNEL ENHANCEMENT MODE DESCRIPTION The UTD413 can provide excellent RDS(ON) and low gate charge by using UTC s advanced trench technology. The UTD413 is well suited for high current load applications with the excellent thermal resistance of the TO-252 package. Standard Product UTD413 is Pb-free. FEATURES * RD... See More ⇒

Detailed specifications: UT4414, UT45N03, UT4800, UT50N03, UT6402, UT75N02, UT8205A, UTD351, IRF1405, UTD452, UTM2054, UTM2513, UTN3055, UTP45N02, UTT200N02, UP2003, UT2309

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs