All MOSFET. UTD410 Datasheet

 

UTD410 Datasheet and Replacement


   Type Designator: UTD410
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 3.7 nS
   Cossⓘ - Output Capacitance: 57 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.048 Ohm
   Package: SOT-223 TO-252
 

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UTD410 Datasheet (PDF)

 ..1. Size:258K  utc
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UTD410

UNISONIC TECHNOLOGIES CO., LTD UTD410 Power MOSFET N-CHANNEL ENHANCEMENT MODE 1 DESCRIPTION SOT-223The UTD410 can provide excellent RDS(ON) and low gate charge by using advanced trench technology. This UTD410 is suitable for using as a load switch or in PWM applications. FEATURES 1* VDS=30V, ID=8A TO-252* RDS(ON) =48m @VGS =10V SYMBOL ORDERING INFORMATI

 9.1. Size:209K  utc
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UTD410

UNISONIC TECHNOLOGIES CO., LTD UTD413 Power MOSFET P-CHANNEL ENHANCEMENT MODE DESCRIPTION The UTD413 can provide excellent RDS(ON) and low gate charge by using UTCs advanced trench technology. The UTD413 is well suited for high current load applications with the excellent thermal resistance of the TO-252 package. Standard Product UTD413 is Pb-free. FEATURES * RD

Datasheet: UT4414 , UT45N03 , UT4800 , UT50N03 , UT6402 , UT75N02 , UT8205A , UTD351 , NCEP15T14 , UTD452 , UTM2054 , UTM2513 , UTN3055 , UTP45N02 , UTT200N02 , UP2003 , UT2309 .

History: CEF730G | NCE70T1K2F | FHU5N65B | IPD70P04P4L-08 | APT9M100S | IXFH20N80P | AP9992GR-HF

Keywords - UTD410 MOSFET datasheet

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