UTD410 Specs and Replacement
Type Designator: UTD410
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 3.7 nS
Cossⓘ - Output Capacitance: 57 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.048 Ohm
UTD410 substitution
- MOSFET ⓘ Cross-Reference Search
UTD410 datasheet
utd410.pdf
UNISONIC TECHNOLOGIES CO., LTD UTD410 Power MOSFET N-CHANNEL ENHANCEMENT MODE 1 DESCRIPTION SOT-223 The UTD410 can provide excellent RDS(ON) and low gate charge by using advanced trench technology. This UTD410 is suitable for using as a load switch or in PWM applications. FEATURES 1 * VDS=30V, ID=8A TO-252 * RDS(ON) =48m @VGS =10V SYMBOL ORDERING INFORMATI... See More ⇒
utd413.pdf
UNISONIC TECHNOLOGIES CO., LTD UTD413 Power MOSFET P-CHANNEL ENHANCEMENT MODE DESCRIPTION The UTD413 can provide excellent RDS(ON) and low gate charge by using UTC s advanced trench technology. The UTD413 is well suited for high current load applications with the excellent thermal resistance of the TO-252 package. Standard Product UTD413 is Pb-free. FEATURES * RD... See More ⇒
Detailed specifications: UT4414, UT45N03, UT4800, UT50N03, UT6402, UT75N02, UT8205A, UTD351, IRF1405, UTD452, UTM2054, UTM2513, UTN3055, UTP45N02, UTT200N02, UP2003, UT2309
Keywords - UTD410 MOSFET specs
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