UTM2513 Specs and Replacement

Type Designator: UTM2513

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 50 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 40 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 60 nS

Cossⓘ - Output Capacitance: 375 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0105 Ohm

Package: TO-251 TO-252

UTM2513 substitution

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UTM2513 datasheet

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UTM2513

UNISONIC TECHNOLOGIES CO., LTD UTM2513 Power MOSFET N-CHANNEL ENHANCEMENT MODE FEATURES * RDS(ON) = 10.5m (typ.) @VGS = 10 V * RDS(ON) = 16m (typ.) @VGS = 4.5 V * Low capacitance * Optimized gate charge * Fast switching capability * Avalanche energy specified SYMBOL 2.Drain Lead-free UTM2513L Halogen-free UTM2513G 1.Gate 3.Source ORDERING INFORMATION... See More ⇒

Detailed specifications: UT50N03, UT6402, UT75N02, UT8205A, UTD351, UTD410, UTD452, UTM2054, IRFZ46N, UTN3055, UTP45N02, UTT200N02, UP2003, UT2309, UT30P03, UT3310, UT3401

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.