UTM2513 Datasheet and Replacement
Type Designator: UTM2513
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 40 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 60 nS
Cossⓘ - Output Capacitance: 375 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0105 Ohm
Package: TO-251 TO-252
UTM2513 substitution
UTM2513 Datasheet (PDF)
utm2513.pdf

UNISONIC TECHNOLOGIES CO., LTD UTM2513 Power MOSFET N-CHANNEL ENHANCEMENT MODE FEATURES * RDS(ON) = 10.5m(typ.) @VGS = 10 V * RDS(ON) = 16m(typ.) @VGS = 4.5 V * Low capacitance * Optimized gate charge * Fast switching capability * Avalanche energy specified SYMBOL 2.Drain Lead-free: UTM2513L Halogen-free: UTM2513G 1.Gate3.Source ORDERING INFORMATION
Datasheet: UT50N03 , UT6402 , UT75N02 , UT8205A , UTD351 , UTD410 , UTD452 , UTM2054 , STP65NF06 , UTN3055 , UTP45N02 , UTT200N02 , UP2003 , UT2309 , UT30P03 , UT3310 , UT3401 .
History: FC6B22220L | NCEP6050QU | PTP4N60 | CHM210BGP | 2N60L-T2Q-T | SIHFD210 | KVN4525Z
Keywords - UTM2513 MOSFET datasheet
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History: FC6B22220L | NCEP6050QU | PTP4N60 | CHM210BGP | 2N60L-T2Q-T | SIHFD210 | KVN4525Z



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