UT30P03 Datasheet and Replacement
Type Designator: UT30P03
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 26 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 50 nS
Cossⓘ - Output Capacitance: 130 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
Package: TO-251 TO-252
UT30P03 substitution
UT30P03 Datasheet (PDF)
ut30p03.pdf
UNISONIC TECHNOLOGIES CO., LTD UT30P03 Power MOSFET P-CHANNEL ENHANCEMENT MODE FEATURES * RDS(ON)
ut30p04.pdf
UNISONIC TECHNOLOGIES CO., LTD UT30P04 Preliminary Power MOSFET P-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC UT30P04 is a P-channel enhancement mode Power MOSFET, providing customers fast switching, ruggedized device design, low on-resistance and cost-effectiveness with UTCs advanced technology. FEATURES * Low on-Resistance * Fast Switching Speed
Datasheet: UTD452 , UTM2054 , UTM2513 , UTN3055 , UTP45N02 , UTT200N02 , UP2003 , UT2309 , K2611 , UT3310 , UT3401 , UT3401Z , UT3403 , UT3409 , UT3443 , UT3P01Z , UT4411 .
History: IXFH56N30X3 | P5506NK
Keywords - UT30P03 MOSFET datasheet
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: IXFH56N30X3 | P5506NK
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