UT30P03 Specs and Replacement

Type Designator: UT30P03

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 50 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 26 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 50 nS

Cossⓘ - Output Capacitance: 130 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm

Package: TO-251 TO-252

UT30P03 substitution

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UT30P03 datasheet

 ..1. Size:159K  utc
 ut30p03.pdf pdf_icon

UT30P03

UNISONIC TECHNOLOGIES CO., LTD UT30P03 Power MOSFET P-CHANNEL ENHANCEMENT MODE FEATURES * RDS(ON) ... See More ⇒

 8.1. Size:126K  utc
 ut30p04.pdf pdf_icon

UT30P03

UNISONIC TECHNOLOGIES CO., LTD UT30P04 Preliminary Power MOSFET P-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC UT30P04 is a P-channel enhancement mode Power MOSFET, providing customers fast switching, ruggedized device design, low on-resistance and cost-effectiveness with UTC s advanced technology. FEATURES * Low on-Resistance * Fast Switching Speed ... See More ⇒

Detailed specifications: UTD452, UTM2054, UTM2513, UTN3055, UTP45N02, UTT200N02, UP2003, UT2309, K2611, UT3310, UT3401, UT3401Z, UT3403, UT3409, UT3443, UT3P01Z, UT4411

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