All MOSFET. UT3P01Z Datasheet

 

UT3P01Z MOSFET. Datasheet pdf. Equivalent


   Type Designator: UT3P01Z
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Maximum Power Dissipation (Pd): 0.2 W
   Maximum Drain-Source Voltage |Vds|: 30 V
   Maximum Gate-Source Voltage |Vgs|: 10 V
   Minimum Gate-to-Source Cutoff Voltage |Vgs(off)|: 0.4 V
   Maximum Drain Current |Id|: 0.1 A
   Maximum Junction Temperature (Tj): 150 °C
   Total Gate Charge (Qg): 1.43 nC
   Rise Time (tr): 55 nS
   Drain-Source Capacitance (Cd): 5.7 pF
   Maximum Drain-Source On-State Resistance (Rds): 8 Ohm
   Package: SOT-323 SOT-523 SOT-23-3

 UT3P01Z Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

UT3P01Z Datasheet (PDF)

 ..1. Size:167K  utc
ut3p01z.pdf

UT3P01Z
UT3P01Z

UNISONIC TECHNOLOGIES CO., LTD UT3P01Z Power MOSFET P CHANNEL POWER MOSFET DESCRIPTION The UT3P01Z uses UTC advanced technology to provide excellent RDS(ON), low gate charge and operated with low gate voltages. This device can be applied to general-purpose switching devices applications. FEATURES * RDS(ON) = 8 @VGS = -4 V * Ultra Low Gate Charge ( typical 1.43 nC )

 9.1. Size:157K  utc
ut3p06.pdf

UT3P01Z
UT3P01Z

UNISONIC TECHNOLOGIES CO., LTD UT3P06 Power MOSFET 3A, 60V (D-S) P-CHANNEL POWER MOSFET DESCRIPTION The UTC UT3P06 is a P-channel enhancement power MOSFET using UTCs advanced technology to provide the customers with perfect RDS(ON) and low gate charge. This UTC UT3P06 can be operated with -4.5V low gate voltage. FEATURES * RDS(ON)=0.19 @ VGS=-10V, RDS(ON)=0.265

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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