UT3P01Z Specs and Replacement

Type Designator: UT3P01Z

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 0.1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 55 nS

Cossⓘ - Output Capacitance: 5.7 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 8 Ohm

Package: SOT-323 SOT-523 SOT-23-3

UT3P01Z substitution

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UT3P01Z datasheet

 ..1. Size:167K  utc
 ut3p01z.pdf pdf_icon

UT3P01Z

UNISONIC TECHNOLOGIES CO., LTD UT3P01Z Power MOSFET P CHANNEL POWER MOSFET DESCRIPTION The UT3P01Z uses UTC advanced technology to provide excellent RDS(ON), low gate charge and operated with low gate voltages. This device can be applied to general-purpose switching devices applications. FEATURES * RDS(ON) = 8 @VGS = -4 V * Ultra Low Gate Charge ( typical 1.43 nC ) ... See More ⇒

 9.1. Size:157K  utc
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UT3P01Z

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Detailed specifications: UT2309, UT30P03, UT3310, UT3401, UT3401Z, UT3403, UT3409, UT3443, IRFP064N, UT4411, UT4413, UT4435, UT6401, UT70P03, UT7401, UT9435, UT9435H

Keywords - UT3P01Z MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs