UT3P01Z Datasheet and Replacement
Type Designator: UT3P01Z
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 0.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Id| ⓘ - Maximum Drain Current: 0.1 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 55 nS
Cossⓘ - Output Capacitance: 5.7 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 8 Ohm
Package: SOT-323 SOT-523 SOT-23-3
UT3P01Z substitution
UT3P01Z Datasheet (PDF)
ut3p01z.pdf

UNISONIC TECHNOLOGIES CO., LTD UT3P01Z Power MOSFET P CHANNEL POWER MOSFET DESCRIPTION The UT3P01Z uses UTC advanced technology to provide excellent RDS(ON), low gate charge and operated with low gate voltages. This device can be applied to general-purpose switching devices applications. FEATURES * RDS(ON) = 8 @VGS = -4 V * Ultra Low Gate Charge ( typical 1.43 nC )
ut3p06.pdf

UNISONIC TECHNOLOGIES CO., LTD UT3P06 Power MOSFET 3A, 60V (D-S) P-CHANNEL POWER MOSFET DESCRIPTION The UTC UT3P06 is a P-channel enhancement power MOSFET using UTCs advanced technology to provide the customers with perfect RDS(ON) and low gate charge. This UTC UT3P06 can be operated with -4.5V low gate voltage. FEATURES * RDS(ON)=0.19 @ VGS=-10V, RDS(ON)=0.265
Datasheet: UT2309 , UT30P03 , UT3310 , UT3401 , UT3401Z , UT3403 , UT3409 , UT3443 , 5N50 , UT4411 , UT4413 , UT4435 , UT6401 , UT70P03 , UT7401 , UT9435 , UT9435H .
History: AFN8987
Keywords - UT3P01Z MOSFET datasheet
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UT3P01Z replacement
History: AFN8987



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