All MOSFET. UT3P01Z Datasheet

 

UT3P01Z MOSFET. Datasheet pdf. Equivalent


   Type Designator: UT3P01Z
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 0.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 0.4 V
   |Id|ⓘ - Maximum Drain Current: 0.1 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 1.43 nC
   trⓘ - Rise Time: 55 nS
   Cossⓘ - Output Capacitance: 5.7 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 8 Ohm
   Package: SOT-323 SOT-523 SOT-23-3

 UT3P01Z Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

UT3P01Z Datasheet (PDF)

 ..1. Size:167K  utc
 ut3p01z.pdf

UT3P01Z UT3P01Z

UNISONIC TECHNOLOGIES CO., LTD UT3P01Z Power MOSFET P CHANNEL POWER MOSFET DESCRIPTION The UT3P01Z uses UTC advanced technology to provide excellent RDS(ON), low gate charge and operated with low gate voltages. This device can be applied to general-purpose switching devices applications. FEATURES * RDS(ON) = 8 @VGS = -4 V * Ultra Low Gate Charge ( typical 1.43 nC )

 9.1. Size:157K  utc
 ut3p06.pdf

UT3P01Z UT3P01Z

UNISONIC TECHNOLOGIES CO., LTD UT3P06 Power MOSFET 3A, 60V (D-S) P-CHANNEL POWER MOSFET DESCRIPTION The UTC UT3P06 is a P-channel enhancement power MOSFET using UTCs advanced technology to provide the customers with perfect RDS(ON) and low gate charge. This UTC UT3P06 can be operated with -4.5V low gate voltage. FEATURES * RDS(ON)=0.19 @ VGS=-10V, RDS(ON)=0.265

Datasheet: UT2309 , UT30P03 , UT3310 , UT3401 , UT3401Z , UT3403 , UT3409 , UT3443 , IRF9640 , UT4411 , UT4413 , UT4435 , UT6401 , UT70P03 , UT7401 , UT9435 , UT9435H .

 

 
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