All MOSFET. UT6401 Datasheet

 

UT6401 MOSFET. Datasheet pdf. Equivalent


   Type Designator: UT6401
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.3 V
   |Id|ⓘ - Maximum Drain Current: 5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 9.5 nC
   trⓘ - Rise Time: 3 nS
   Cossⓘ - Output Capacitance: 108 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.042 Ohm
   Package: SOT-26 SOT-23

 UT6401 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

UT6401 Datasheet (PDF)

 ..1. Size:279K  utc
 ut6401.pdf

UT6401 UT6401

UNISONIC TECHNOLOGIES CO., LTD UT6401 Power MOSFET 5A, 30V P-CHANNEL ENHANCEMENT MODE 31 DESCRIPTION 2SOT-23The UTC UT6401 is P-channel enhancement mode Power (SC-59)MOSFET, designed with high density cell, with fast switching 4speed, low on-resistance, excellent thermal and electrical 5capabilities, operation with low gate charge. 6This device is suitable for u

 9.1. Size:230K  utc
 ut6402.pdf

UT6401 UT6401

UNISONIC TECHNOLOGIES CO., LTD UT6402 Power MOSFET N-CHANNEL ENHANCEMENT MODE 31 DESCRIPTION 2SOT-23The UT6402 is N-Channel enhancement mode Power MOSFET, designed with high density cell, with fast switching 4speed, low on-resistance, excellent thermal and electrical 5capabilities, operation with low gate voltages. 6This device is suitable for use as a load swit

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

History: FDMC5614P

 

 
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