UT6401 Datasheet and Replacement
Type Designator: UT6401
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 3 nS
Cossⓘ - Output Capacitance: 108 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.042 Ohm
Package: SOT-26 SOT-23
UT6401 substitution
UT6401 Datasheet (PDF)
ut6401.pdf
UNISONIC TECHNOLOGIES CO., LTD UT6401 Power MOSFET 5A, 30V P-CHANNEL ENHANCEMENT MODE 31 DESCRIPTION 2SOT-23The UTC UT6401 is P-channel enhancement mode Power (SC-59)MOSFET, designed with high density cell, with fast switching 4speed, low on-resistance, excellent thermal and electrical 5capabilities, operation with low gate charge. 6This device is suitable for u
ut6402.pdf
UNISONIC TECHNOLOGIES CO., LTD UT6402 Power MOSFET N-CHANNEL ENHANCEMENT MODE 31 DESCRIPTION 2SOT-23The UT6402 is N-Channel enhancement mode Power MOSFET, designed with high density cell, with fast switching 4speed, low on-resistance, excellent thermal and electrical 5capabilities, operation with low gate voltages. 6This device is suitable for use as a load swit
Datasheet: UT3401Z , UT3403 , UT3409 , UT3443 , UT3P01Z , UT4411 , UT4413 , UT4435 , IRF3205 , UT70P03 , UT7401 , UT9435 , UT9435H , UT9435HZ , UTC654 , UTD405 , UTR4502 .
Keywords - UT6401 MOSFET datasheet
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