All MOSFET. UT6401 Datasheet

 

UT6401 Datasheet and Replacement


   Type Designator: UT6401
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id|ⓘ - Maximum Drain Current: 5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 3 nS
   Cossⓘ - Output Capacitance: 108 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.042 Ohm
   Package: SOT-26 SOT-23
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UT6401 Datasheet (PDF)

 ..1. Size:279K  utc
 ut6401.pdf pdf_icon

UT6401

UNISONIC TECHNOLOGIES CO., LTD UT6401 Power MOSFET 5A, 30V P-CHANNEL ENHANCEMENT MODE 31 DESCRIPTION 2SOT-23The UTC UT6401 is P-channel enhancement mode Power (SC-59)MOSFET, designed with high density cell, with fast switching 4speed, low on-resistance, excellent thermal and electrical 5capabilities, operation with low gate charge. 6This device is suitable for u

 9.1. Size:230K  utc
 ut6402.pdf pdf_icon

UT6401

UNISONIC TECHNOLOGIES CO., LTD UT6402 Power MOSFET N-CHANNEL ENHANCEMENT MODE 31 DESCRIPTION 2SOT-23The UT6402 is N-Channel enhancement mode Power MOSFET, designed with high density cell, with fast switching 4speed, low on-resistance, excellent thermal and electrical 5capabilities, operation with low gate voltages. 6This device is suitable for use as a load swit

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: WMK25N80M3 | MTC2804Q8

Keywords - UT6401 MOSFET datasheet

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