UTT4407 Datasheet and Replacement
Type Designator: UTT4407
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 12 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 8.2 nS
Cossⓘ - Output Capacitance: 503 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm
Package: SOP-8
UTT4407 substitution
UTT4407 Datasheet (PDF)
utt4407.pdf

UNISONIC TECHNOLOGIES CO., LTD UTT4407 Preliminary Power MOSFET P-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC UTT4407 is a P-channel enhancement mode power MOSFET using UTCs advanced trench technology to provide customers with a minimum on-state resistance and extremal lowgate charge with a 25V gate rating The UTC UTT4407 is universally applied in PWM or use
utt4425.pdf

UNISONIC TECHNOLOGIES CO., LTD UTT4425 Preliminary Power MOSFET P-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC UTT4425 is a P-channel enhancement mode powerMOSFET using UTCs advanced trench technology to provide customers with a minimum on-state resistance and extremal low gate charge with a 25V gate rating. The UTC UTT4425 is ESD protected and it is univer
Datasheet: UT9435 , UT9435H , UT9435HZ , UTC654 , UTD405 , UTR4502 , UTT100P03 , UTT36P03 , IRFP260N , UTT4425 , UTT4815 , UTT60P03 , BSS84Z , UT30P04 , UT3P06 , UT5504 , UT9564 .
History: AON7452 | CS4N70F | VBZM40N03 | IPD038N04NG | STB34NM60N | CS4N65P | HM4884A
Keywords - UTT4407 MOSFET datasheet
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History: AON7452 | CS4N70F | VBZM40N03 | IPD038N04NG | STB34NM60N | CS4N65P | HM4884A



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