UT3P06 Datasheet and Replacement
Type Designator: UT3P06
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 1.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 12 nS
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm
Package: SOT-26 SOT-23
UT3P06 substitution
UT3P06 Datasheet (PDF)
ut3p06.pdf

UNISONIC TECHNOLOGIES CO., LTD UT3P06 Power MOSFET 3A, 60V (D-S) P-CHANNEL POWER MOSFET DESCRIPTION The UTC UT3P06 is a P-channel enhancement power MOSFET using UTCs advanced technology to provide the customers with perfect RDS(ON) and low gate charge. This UTC UT3P06 can be operated with -4.5V low gate voltage. FEATURES * RDS(ON)=0.19 @ VGS=-10V, RDS(ON)=0.265
ut3p01z.pdf

UNISONIC TECHNOLOGIES CO., LTD UT3P01Z Power MOSFET P CHANNEL POWER MOSFET DESCRIPTION The UT3P01Z uses UTC advanced technology to provide excellent RDS(ON), low gate charge and operated with low gate voltages. This device can be applied to general-purpose switching devices applications. FEATURES * RDS(ON) = 8 @VGS = -4 V * Ultra Low Gate Charge ( typical 1.43 nC )
Datasheet: UTT100P03 , UTT36P03 , UTT4407 , UTT4425 , UTT4815 , UTT60P03 , BSS84Z , UT30P04 , P55NF06 , UT5504 , UT9564 , UTD413 , UTT15P06 , UTT18P06 , UTT20P04 , UTT25P06 , UTT30P04 .
History: SFF250ZDB | HY6N60T | AFP3413A | SIHFI9610G | 2SK2149 | CHM2346ESGP
Keywords - UT3P06 MOSFET datasheet
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History: SFF250ZDB | HY6N60T | AFP3413A | SIHFI9610G | 2SK2149 | CHM2346ESGP



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