UD4809 Datasheet and Replacement
Type Designator: UD4809
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 21.3 nS
Cossⓘ - Output Capacitance: 315 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm
Package: TO-252
UD4809 Datasheet (PDF)
ud4809.pdf

UNISONIC TECHNOLOGIES CO., LTD UD4809 Power MOSFET N-CHANNEL ENHANCEMENT MODE DESCRIPTION This UD4809 N-Channel MOSFET is produced using UTCadvanced process which has been tailored to make the on-state resistance minimum and yet maintain low gate charge for superior switching performance especially. The UD4809 is well suited for where low in-line power loss is needed in a ve
Datasheet: UTT20P04 , UTT25P06 , UTT30P04 , UTT30P06 , UTT40P04 , UTT50P04 , UTT50P06 , UTT65P04 , K4145 , UF1404 , UK1398 , UM6K31N , UMBF170 , UP672 , UT100N03 , UT100N03-Q , UT108N03 .
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