UD4809 MOSFET. Datasheet pdf. Equivalent
Type Designator: UD4809
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 1.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 9 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 21.3 nS
Cossⓘ - Output Capacitance: 315 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm
Package: TO-252
UD4809 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
UD4809 Datasheet (PDF)
ud4809.pdf
UNISONIC TECHNOLOGIES CO., LTD UD4809 Power MOSFET N-CHANNEL ENHANCEMENT MODE DESCRIPTION This UD4809 N-Channel MOSFET is produced using UTCadvanced process which has been tailored to make the on-state resistance minimum and yet maintain low gate charge for superior switching performance especially. The UD4809 is well suited for where low in-line power loss is needed in a ve
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
LIST
Last Update
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918