All MOSFET. UMBF170 Datasheet

 

UMBF170 Datasheet and Replacement


   Type Designator: UMBF170
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.83 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 0.3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Cossⓘ - Output Capacitance: 18 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.8 Ohm
   Package: SOT-23-3
 

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UMBF170 Datasheet (PDF)

 ..1. Size:205K  utc
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UMBF170

UNISONIC TECHNOLOGIES CO., LTD UMBF170 Power MOSFET N-CHANNEL ENHANCEMENT MODE DESCRIPTION The UMBF170 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)

Datasheet: UTT40P04 , UTT50P04 , UTT50P06 , UTT65P04 , UD4809 , UF1404 , UK1398 , UM6K31N , AO3401 , UP672 , UT100N03 , UT100N03-Q , UT108N03 , UT110N03 , UT120N03 , UT136N03 , UT150N04 .

History: NCE01H21T | UT100N03-Q

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