UMBF170 MOSFET. Datasheet pdf. Equivalent
Type Designator: UMBF170
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 0.83 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
|Id|ⓘ - Maximum Drain Current: 0.3 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Cossⓘ - Output Capacitance: 18 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.8 Ohm
Package: SOT-23-3
UMBF170 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
UMBF170 Datasheet (PDF)
umbf170.pdf
UNISONIC TECHNOLOGIES CO., LTD UMBF170 Power MOSFET N-CHANNEL ENHANCEMENT MODE DESCRIPTION The UMBF170 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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