UMBF170 Specs and Replacement

Type Designator: UMBF170

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.83 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 0.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

Cossⓘ - Output Capacitance: 18 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.8 Ohm

Package: SOT-23-3

UMBF170 substitution

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UMBF170 datasheet

 ..1. Size:205K  utc
 umbf170.pdf pdf_icon

UMBF170

UNISONIC TECHNOLOGIES CO., LTD UMBF170 Power MOSFET N-CHANNEL ENHANCEMENT MODE DESCRIPTION The UMBF170 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)... See More ⇒

Detailed specifications: UTT40P04, UTT50P04, UTT50P06, UTT65P04, UD4809, UF1404, UK1398, UM6K31N, AO3401, UP672, UT100N03, UT100N03-Q, UT108N03, UT110N03, UT120N03, UT136N03, UT150N04

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.