All MOSFET. UT110N03 Datasheet

 

UT110N03 MOSFET. Datasheet pdf. Equivalent


   Type Designator: UT110N03
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 110 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 50 nC
   trⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 800 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0039 Ohm
   Package: TO-220

 UT110N03 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

UT110N03 Datasheet (PDF)

 ..1. Size:143K  utc
 ut110n03.pdf

UT110N03 UT110N03

UNISONIC TECHNOLOGIES CO., LTD UT110N03 Power MOSFET N-CHANNEL ENHANCEMENT MODE DESCRIPTION The UT110N03 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * VDS(V)=26V * ID=110A * RDS(ON) =4.8m@VGS=10 V * RDS(ON) =7.

 9.1. Size:41K  st
 but110.pdf

UT110N03 UT110N03

BUT100HIGH POWER NPN SILICON TRANSISTORn HIGH EFFICIENCY SWITCHINGn VERY LOW SATURATION VOLTAGEn RECTANGULAR SAFE OPERATION AREAn WIDE ACCIDENTAL OVERLOAD AREADESCRIPTIONSuitable for motor drivers, SMPS converters,uninterruptable power supply operating low1voltage supply.2TO-3INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitVCEV Collec

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: VBA1615 | FDB035N10A | VBA2216

 

 
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