UNISONIC TECHNOLOGIES CO., LTD UT110N03 Power MOSFET N-CHANNEL ENHANCEMENT MODE DESCRIPTION The UT110N03 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * VDS(V)=26V * ID=110A * RDS(ON) =4.8m@VGS=10 V * RDS(ON) =7.

BUT100HIGH POWER NPN SILICON TRANSISTORn HIGH EFFICIENCY SWITCHINGn VERY LOW SATURATION VOLTAGEn RECTANGULAR SAFE OPERATION AREAn WIDE ACCIDENTAL OVERLOAD AREADESCRIPTIONSuitable for motor drivers, SMPS converters,uninterruptable power supply operating low1voltage supply.2TO-3INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitVCEV Collec