All MOSFET. UT136N03 Datasheet

 

UT136N03 Datasheet and Replacement


   Type Designator: UT136N03
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 136 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 800 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0036 Ohm
   Package: TO-220 TO-263
 

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UT136N03 Datasheet (PDF)

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UT136N03

UNISONIC TECHNOLOGIES CO., LTD UT136N03 Preliminary Power MOSFET N-CHANNEL ENHANCEMENT MODE DESCRIPTION The UT136N03 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * VDS(V)= 30 V * ID=136 A * RDS(ON)= 4.5m@VGS=10 V

Datasheet: UM6K31N , UMBF170 , UP672 , UT100N03 , UT100N03-Q , UT108N03 , UT110N03 , UT120N03 , 13N50 , UT150N04 , UT20N03 , UT3006 , UT3009 , UT30N03 , UT3458 , UT3N06 , UT40N03 .

History: FQP7N60 | 2N7002-G | 2N7002ESEGP | UT100N03

Keywords - UT136N03 MOSFET datasheet

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