UT136N03 Datasheet and Replacement
Type Designator: UT136N03
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 100 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 136 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 800 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0036 Ohm
Package: TO-220 TO-263
UT136N03 substitution
UT136N03 Datasheet (PDF)
ut136n03.pdf

UNISONIC TECHNOLOGIES CO., LTD UT136N03 Preliminary Power MOSFET N-CHANNEL ENHANCEMENT MODE DESCRIPTION The UT136N03 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * VDS(V)= 30 V * ID=136 A * RDS(ON)= 4.5m@VGS=10 V
Datasheet: UM6K31N , UMBF170 , UP672 , UT100N03 , UT100N03-Q , UT108N03 , UT110N03 , UT120N03 , TK10A60D , UT150N04 , UT20N03 , UT3006 , UT3009 , UT30N03 , UT3458 , UT3N06 , UT40N03 .
History: P0690ATFS | BRCS070N08SRA
Keywords - UT136N03 MOSFET datasheet
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History: P0690ATFS | BRCS070N08SRA



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