UT136N03 Specs and Replacement

Type Designator: UT136N03

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 100 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 136 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 800 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0036 Ohm

Package: TO-220 TO-263

UT136N03 substitution

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UT136N03 datasheet

 ..1. Size:148K  utc
 ut136n03.pdf pdf_icon

UT136N03

UNISONIC TECHNOLOGIES CO., LTD UT136N03 Preliminary Power MOSFET N-CHANNEL ENHANCEMENT MODE DESCRIPTION The UT136N03 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * VDS(V)= 30 V * ID=136 A * RDS(ON)= 4.5m @VGS=10 V ... See More ⇒

Detailed specifications: UM6K31N, UMBF170, UP672, UT100N03, UT100N03-Q, UT108N03, UT110N03, UT120N03, 13N50, UT150N04, UT20N03, UT3006, UT3009, UT30N03, UT3458, UT3N06, UT40N03

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