UT150N04 Specs and Replacement
Type Designator: UT150N04
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 166 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 150 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 140 nS
Cossⓘ - Output Capacitance: 1490 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0035 Ohm
Package: TO-220
UT150N04 substitution
- MOSFET ⓘ Cross-Reference Search
UT150N04 datasheet
ut150n04.pdf
UNISONIC TECHNOLOGIES CO., LTD UT150N04 Preliminary Power MOSFET 150A, 40V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UT150N04 is a N-channel enhancement MOSFET using UTC s advanced technology to provide the customers with perfect RDS(ON) and high switching speed. The UTC UT150N04 is suitable for all commercial-industrial applications at power dissipation levels to approxim... See More ⇒
Detailed specifications: UMBF170, UP672, UT100N03, UT100N03-Q, UT108N03, UT110N03, UT120N03, UT136N03, AON7410, UT20N03, UT3006, UT3009, UT30N03, UT3458, UT3N06, UT40N03, UT40N03T
Keywords - UT150N04 MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: FQB50N06LTM
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