UT150N04 MOSFET. Datasheet pdf. Equivalent
Type Designator: UT150N04
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 166 W
Maximum Drain-Source Voltage |Vds|: 40 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 150 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 160 nC
Rise Time (tr): 140 nS
Drain-Source Capacitance (Cd): 1490 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0035 Ohm
Package: TO-220
UT150N04 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
UT150N04 Datasheet (PDF)
..1. Size:186K utc
ut150n04.pdf
ut150n04.pdf
UNISONIC TECHNOLOGIES CO., LTD UT150N04 Preliminary Power MOSFET 150A, 40V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UT150N04 is a N-channel enhancement MOSFET usingUTCs advanced technology to provide the customers with perfect RDS(ON) and high switching speed. The UTC UT150N04 is suitable for all commercial-industrial applications at power dissipation levels to approxim
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