UT20N03 Datasheet and Replacement
Type Designator: UT20N03
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 60 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Qg ⓘ - Total Gate Charge: 8.4 nC
tr ⓘ - Rise Time: 11 nS
Cossⓘ - Output Capacitance: 200 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0155 Ohm
Package: TO-252
UT20N03 substitution
UT20N03 Datasheet (PDF)
ut20n03.pdf

UNISONIC TECHNOLOGIES CO., LTD UT20N03 Power MOSFET N-CHANNEL ENHANCEMENT MODE FEATURES * RDS(ON) = 20m @VGS = 10 V * Low capacitance * Optimized gate charge * Fast switching capability * Avalanche energy specified SYMBOL 2.Drain1.Gate3.Source ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 4 5 6 7 8U
ut20n03.pdf

Isc N-Channel MOSFET Transistor UT20N03FEATURESWith To-252(DPAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltag
ut20n03l-tn3-r ut20n03g-tn3-r ut20n03g-k08-5060-r.pdf

UNISONIC TECHNOLOGIES CO., LTD UT20N03 Power MOSFET N-CHANNEL ENHANCEMENT MODE FEATURES * RDS(ON)
Datasheet: UP672 , UT100N03 , UT100N03-Q , UT108N03 , UT110N03 , UT120N03 , UT136N03 , UT150N04 , 4N60 , UT3006 , UT3009 , UT30N03 , UT3458 , UT3N06 , UT40N03 , UT40N03T , UT40N04 .
History: 2SK2816 | SQ3457EV | IRFP4232PBF | 2SK2859
Keywords - UT20N03 MOSFET datasheet
UT20N03 cross reference
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History: 2SK2816 | SQ3457EV | IRFP4232PBF | 2SK2859



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