UT30N03 Specs and Replacement

Type Designator: UT30N03

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 47 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 30 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 320 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm

Package: TO-220F TO-252

UT30N03 substitution

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UT30N03 datasheet

 ..1. Size:197K  utc
 ut30n03.pdf pdf_icon

UT30N03

UNISONIC TECHNOLOGIES CO., LTD UT30N03 Power MOSFET N-CHANNEL ENHANCEMENT MODE FEATURES * RDS(ON) = 30m @VGS = 10 V * Low Capacitance * Optimized gate charge * Fast switching capability * Avalanche energy specified SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 UT30N03L-TF... See More ⇒

Detailed specifications: UT108N03, UT110N03, UT120N03, UT136N03, UT150N04, UT20N03, UT3006, UT3009, IRFB3607, UT3458, UT3N06, UT40N03, UT40N03T, UT40N04, UT4392, UT4406, UT4410

Keywords - UT30N03 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.