UT4446 Datasheet and Replacement
Type Designator: UT4446
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1.6 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 15 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 8.2 nS
Cossⓘ - Output Capacitance: 306 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0069 Ohm
Package: SOP-8 TSSOP-8
UT4446 substitution
UT4446 Datasheet (PDF)
ut4446.pdf

UNISONIC TECHNOLOGIES CO., LTD UT4446 Power MOSFET N-CHANNEL ENHANCEMENT MODE DESCRIPTION SOP-8The UT4446 uses UTCs advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)
Datasheet: UT3N06 , UT40N03 , UT40N03T , UT40N04 , UT4392 , UT4406 , UT4410 , UT4430 , 18N50 , UT60N03 , UT60T03 , UT65N03 , UT70N03L , UT7410 , UT75N03 , UT85N03 , UT90N03 .
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