All MOSFET. UT65N03 Datasheet

 

UT65N03 Datasheet and Replacement


   Type Designator: UT65N03
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 54 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 65 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 18.6 nS
   Cossⓘ - Output Capacitance: 555 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm
   Package: TO-220
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UT65N03 Datasheet (PDF)

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UT65N03

UNISONIC TECHNOLOGIES CO., LTD UT65N03 Preliminary Power MOSFET 65 Amps, 30 Volts, 3.7m N-CHANNEL POWER MOSFET DESCRIPTION The UTC UT65N03 is a N-channel Trench technology usingUTCs advanced Trench technology to provide customers with a minimum on-state resistance, low gate charge and superior switching performance. FEATURES * VDS= 30V, ID=65A, * RDS(ON)=65m @

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: IPAN60R360P7S | SLF13N50A | BRCS200P03DP | SFB063N80C3 | PJA94N03 | LKK47-06C5 | TSM4424CS

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