UT65N03 Datasheet and Replacement
Type Designator: UT65N03
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 54 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 65 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 18.6 nS
Cossⓘ - Output Capacitance: 555 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm
Package: TO-220
UT65N03 substitution
UT65N03 Datasheet (PDF)
ut65n03.pdf

UNISONIC TECHNOLOGIES CO., LTD UT65N03 Preliminary Power MOSFET 65 Amps, 30 Volts, 3.7m N-CHANNEL POWER MOSFET DESCRIPTION The UTC UT65N03 is a N-channel Trench technology usingUTCs advanced Trench technology to provide customers with a minimum on-state resistance, low gate charge and superior switching performance. FEATURES * VDS= 30V, ID=65A, * RDS(ON)=65m @
Datasheet: UT40N04 , UT4392 , UT4406 , UT4410 , UT4430 , UT4446 , UT60N03 , UT60T03 , P0903BDG , UT70N03L , UT7410 , UT75N03 , UT85N03 , UT90N03 , UT9971P , UTD408 , UTD420 .
History: 8N65KG-TF1-T | SPP03N60C3 | 2SK1403 | CJQ4406 | TSM2312CX | 2N7002NXBK | IPAN60R360P7S
Keywords - UT65N03 MOSFET datasheet
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History: 8N65KG-TF1-T | SPP03N60C3 | 2SK1403 | CJQ4406 | TSM2312CX | 2N7002NXBK | IPAN60R360P7S



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