UT65N03 Specs and Replacement

Type Designator: UT65N03

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 54 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 65 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 18.6 nS

Cossⓘ - Output Capacitance: 555 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm

Package: TO-220

UT65N03 substitution

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UT65N03 datasheet

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UT65N03

UNISONIC TECHNOLOGIES CO., LTD UT65N03 Preliminary Power MOSFET 65 Amps, 30 Volts, 3.7m N-CHANNEL POWER MOSFET DESCRIPTION The UTC UT65N03 is a N-channel Trench technology using UTC s advanced Trench technology to provide customers with a minimum on-state resistance, low gate charge and superior switching performance. FEATURES * VDS= 30V, ID=65A, * RDS(ON)=65m @... See More ⇒

Detailed specifications: UT40N04, UT4392, UT4406, UT4410, UT4430, UT4446, UT60N03, UT60T03, IRF1407, UT70N03L, UT7410, UT75N03, UT85N03, UT90N03, UT9971P, UTD408, UTD420

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