All MOSFET. UT65N03 Datasheet

 

UT65N03 MOSFET. Datasheet pdf. Equivalent


   Type Designator: UT65N03
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 54 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 65 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 12.2 nC
   trⓘ - Rise Time: 18.6 nS
   Cossⓘ - Output Capacitance: 555 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm
   Package: TO-220

 UT65N03 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

UT65N03 Datasheet (PDF)

 ..1. Size:138K  utc
 ut65n03.pdf

UT65N03 UT65N03

UNISONIC TECHNOLOGIES CO., LTD UT65N03 Preliminary Power MOSFET 65 Amps, 30 Volts, 3.7m N-CHANNEL POWER MOSFET DESCRIPTION The UTC UT65N03 is a N-channel Trench technology usingUTCs advanced Trench technology to provide customers with a minimum on-state resistance, low gate charge and superior switching performance. FEATURES * VDS= 30V, ID=65A, * RDS(ON)=65m @

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