UT70N03L Specs and Replacement

Type Designator: UT70N03L

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 53 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 60 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 105 nS

Cossⓘ - Output Capacitance: 245 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm

Package: TO251 TO252

UT70N03L substitution

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UT70N03L datasheet

 7.1. Size:146K  utc
 ut70n03.pdf pdf_icon

UT70N03L

UNISONIC TECHNOLOGIES CO., LTD UT70N03 Preliminary Power MOSFET N-CHANNEL ENHANCEMENT MODE DESCRIPTION The UT70N03 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)... See More ⇒

Detailed specifications: UT4392, UT4406, UT4410, UT4430, UT4446, UT60N03, UT60T03, UT65N03, 2SK3568, UT7410, UT75N03, UT85N03, UT90N03, UT9971P, UTD408, UTD420, UTD436

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