UT70N03L Datasheet and Replacement
Type Designator: UT70N03L
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 53 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 60 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 105 nS
Cossⓘ - Output Capacitance: 245 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
Package: TO251 TO252
UT70N03L substitution
UT70N03L Datasheet (PDF)
ut70n03.pdf

UNISONIC TECHNOLOGIES CO., LTD UT70N03 Preliminary Power MOSFET N-CHANNEL ENHANCEMENT MODE DESCRIPTION The UT70N03 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)
Datasheet: UT4392 , UT4406 , UT4410 , UT4430 , UT4446 , UT60N03 , UT60T03 , UT65N03 , 5N65 , UT7410 , UT75N03 , UT85N03 , UT90N03 , UT9971P , UTD408 , UTD420 , UTD436 .
History: RQ3E180GN | AO4712 | DH100P25B | RT3J22M | OSG65R099HSF | TPW80R300MFD | BUK9507-30B
Keywords - UT70N03L MOSFET datasheet
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History: RQ3E180GN | AO4712 | DH100P25B | RT3J22M | OSG65R099HSF | TPW80R300MFD | BUK9507-30B



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