UT70N03L MOSFET. Datasheet pdf. Equivalent
Type Designator: UT70N03L
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 53 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 60 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 105 nS
Cossⓘ - Output Capacitance: 245 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
Package: TO251 TO252
UT70N03L Transistor Equivalent Substitute - MOSFET Cross-Reference Search
UT70N03L Datasheet (PDF)
ut70n03.pdf
UNISONIC TECHNOLOGIES CO., LTD UT70N03 Preliminary Power MOSFET N-CHANNEL ENHANCEMENT MODE DESCRIPTION The UT70N03 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)
Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
History: FQD2N40TM
History: FQD2N40TM
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