All MOSFET. UTD436 Datasheet

 

UTD436 Datasheet and Replacement


   Type Designator: UTD436
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id| ⓘ - Maximum Drain Current: 60 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 16.2 nC
   tr ⓘ - Rise Time: 11.6 nS
   Cossⓘ - Output Capacitance: 306 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0054 Ohm
   Package: TO-252
 

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UTD436 Datasheet (PDF)

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UTD436

UNISONIC TECHNOLOGIES CO., LTD UTD436 Preliminary Power MOSFET N-CHANNEL ENHANCEMENT MODE DESCRIPTION The UTD436 uses UTCs advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRF530 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: BUZ272

Keywords - UTD436 MOSFET datasheet

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