UTD436 Specs and Replacement

Type Designator: UTD436

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 50 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 60 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11.6 nS

Cossⓘ - Output Capacitance: 306 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0054 Ohm

Package: TO-252

UTD436 substitution

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UTD436 datasheet

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UTD436

UNISONIC TECHNOLOGIES CO., LTD UTD436 Preliminary Power MOSFET N-CHANNEL ENHANCEMENT MODE DESCRIPTION The UTD436 uses UTC s advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)... See More ⇒

Detailed specifications: UT70N03L, UT7410, UT75N03, UT85N03, UT90N03, UT9971P, UTD408, UTD420, IRF520, UTD454, UTD484, UTF1404, UTL1426, UTM3023, UTT100N05, UTT108N03, UTT120N04

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