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10NN15 Spec and Replacement


   Type Designator: 10NN15
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 7 nS
   Cossⓘ - Output Capacitance: 60 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
   Package: SOP-8
 

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10NN15 Specs

 ..1. Size:216K  utc
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10NN15

UNISONIC TECHNOLOGIES CO., LTD 10NN15 Power MOSFET DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION SOP-8 The UTC 10NN15 is a Dual N-channel enhancement mode power MOSFET using UTC s perfect technology to provide customers with fast switching, ruggedized device design, low on-resistance and cost-effectiveness. FEATURES * High switching speed * Low Gate... See More ⇒

Detailed specifications: K1109 , TF202 , TF212 , TF215 , TF218 , K4059 , 2SK2751 , UJ0100 , IRFP064N , 12NN10 , 2N7002ZDW , UD9926 , UM6K1N , UP9971 , UT4232 , UT4812 , UT4812Z .

History: 12N70G-TA3-T

Keywords - 10NN15 MOSFET specs

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