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10NN15 Specs and Replacement

Type Designator: 10NN15

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7 nS

Cossⓘ - Output Capacitance: 60 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm

Package: SOP-8

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10NN15 datasheet

 ..1. Size:216K  utc
10nn15.pdf pdf_icon

10NN15

UNISONIC TECHNOLOGIES CO., LTD 10NN15 Power MOSFET DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION SOP-8 The UTC 10NN15 is a Dual N-channel enhancement mode power MOSFET using UTC s perfect technology to provide customers with fast switching, ruggedized device design, low on-resistance and cost-effectiveness. FEATURES * High switching speed * Low Gate... See More ⇒

Detailed specifications: K1109 , TF202 , TF212 , TF215 , TF218 , K4059 , 2SK2751 , UJ0100 , IRFP064N , 12NN10 , 2N7002ZDW , UD9926 , UM6K1N , UP9971 , UT4232 , UT4812 , UT4812Z .

Keywords - 10NN15 MOSFET specs

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