All MOSFET. 10NN15 Datasheet

 

10NN15 MOSFET. Datasheet pdf. Equivalent

Type Designator: 10NN15

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 2 W

Maximum Drain-Source Voltage |Vds|: 150 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 3 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 7 nS

Drain-Source Capacitance (Cd): 60 pF

Maximum Drain-Source On-State Resistance (Rds): 0.4 Ohm

Package: SOP-8

10NN15 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

10NN15 Datasheet (PDF)

1.1. 10nn15.pdf Size:216K _utc

10NN15
10NN15

UNISONIC TECHNOLOGIES CO., LTD 10NN15 Power MOSFET DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET ? DESCRIPTION SOP-8 The UTC 10NN15 is a Dual N-channel enhancement mode power MOSFET using UTC’s perfect technology to provide customers with fast switching, ruggedized device design, low on-resistance and cost-effectiveness. ? FEATURES * High switching speed * Low Gate Charge

Datasheet: IRFP255 , IRFP260 , IRFP264 , IRFP330 , IRFP331 , IRFP332 , IRFP333 , IRFP340 , 2N5484 , IRFP341 , IRFP342 , IRFP343 , IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC .

 
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