10NN15 Datasheet and Replacement
Type Designator: 10NN15
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 7 nS
Cossⓘ - Output Capacitance: 60 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
Package: SOP-8
10NN15 substitution
10NN15 Datasheet (PDF)
10nn15.pdf

UNISONIC TECHNOLOGIES CO., LTD 10NN15 Power MOSFET DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION SOP-8The UTC 10NN15 is a Dual N-channel enhancement mode power MOSFET using UTCs perfect technology to provide customers with fast switching, ruggedized device design, low on-resistance and cost-effectiveness. FEATURES * High switching speed * Low Gate
Datasheet: K1109 , TF202 , TF212 , TF215 , TF218 , K4059 , 2SK2751 , UJ0100 , 5N50 , 12NN10 , 2N7002ZDW , UD9926 , UM6K1N , UP9971 , UT4232 , UT4812 , UT4812Z .
History: IRL3103LPBF
Keywords - 10NN15 MOSFET datasheet
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History: IRL3103LPBF



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