10NN15 Specs and Replacement
Type Designator: 10NN15
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 7 nS
Cossⓘ - Output Capacitance: 60 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
Package: SOP-8
10NN15 substitution
- MOSFET ⓘ Cross-Reference Search
10NN15 datasheet
10nn15.pdf
UNISONIC TECHNOLOGIES CO., LTD 10NN15 Power MOSFET DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION SOP-8 The UTC 10NN15 is a Dual N-channel enhancement mode power MOSFET using UTC s perfect technology to provide customers with fast switching, ruggedized device design, low on-resistance and cost-effectiveness. FEATURES * High switching speed * Low Gate... See More ⇒
Detailed specifications: K1109 , TF202 , TF212 , TF215 , TF218 , K4059 , 2SK2751 , UJ0100 , IRFP064N , 12NN10 , 2N7002ZDW , UD9926 , UM6K1N , UP9971 , UT4232 , UT4812 , UT4812Z .
Keywords - 10NN15 MOSFET specs
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
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