UT4232 Specs and Replacement
Type Designator: UT4232
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 7.8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 7 nS
Cossⓘ - Output Capacitance: 230 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm
Package: SOP-8
UT4232 substitution
- MOSFET ⓘ Cross-Reference Search
UT4232 datasheet
ut4232.pdf
UNISONIC TECHNOLOGIES CO., LTD UT4232 Preliminary Power MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UT4232 uses UTC advanced technology to provide excellent RDS(ON), low gate charge and to be operated with low gate voltages. This device is suitable for applications, such as high-side DC/DC conversion, notebook and sever. FEATURES * VDS(V)=30V * ID=7A... See More ⇒
Detailed specifications: 2SK2751 , UJ0100 , 10NN15 , 12NN10 , 2N7002ZDW , UD9926 , UM6K1N , UP9971 , IRF840 , UT4812 , UT4812Z , UT4822 , UT4957 , UT6898 , UT7317 , UTM4953 , RD00HHS1 .
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UT4232 replacement
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