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UT4232 PDF Specs and Replacement


   Type Designator: UT4232
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 7.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 7 nS
   Cossⓘ - Output Capacitance: 230 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm
   Package: SOP-8
 

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UT4232 PDF Specs

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UT4232

UNISONIC TECHNOLOGIES CO., LTD UT4232 Preliminary Power MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UT4232 uses UTC advanced technology to provide excellent RDS(ON), low gate charge and to be operated with low gate voltages. This device is suitable for applications, such as high-side DC/DC conversion, notebook and sever. FEATURES * VDS(V)=30V * ID=7A... See More ⇒

Detailed specifications: 2SK2751 , UJ0100 , 10NN15 , 12NN10 , 2N7002ZDW , UD9926 , UM6K1N , UP9971 , IRF840 , UT4812 , UT4812Z , UT4822 , UT4957 , UT6898 , UT7317 , UTM4953 , RD00HHS1 .

History: HPP400N06CTA

Keywords - UT4232 MOSFET specs

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