UT4822 Specs and Replacement
Type Designator: UT4822
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 8.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 4.4 nS
Cossⓘ - Output Capacitance: 180 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0134 Ohm
Package: SOP-8
UT4822 substitution
- MOSFET ⓘ Cross-Reference Search
UT4822 datasheet
ut4822.pdf
UNISONIC TECHNOLOGIES CO., LTD UT4822 Power MOSFET DUAL N-CHANNEL ENHANCEMENT MODE DESCRIPTION The UT4822 can provide excellent RDS(ON) and low gate charge by using advanced trench technology. The UT4822 is suitable for using as a load switch or in PWM applications. FEATURES * 30V/8.5A * Low RDS(ON) * Reliable and Rugged SYMBOL (7) (8) (5) (6) D1 D2 (2) (4) ... See More ⇒
Detailed specifications: 12NN10, 2N7002ZDW, UD9926, UM6K1N, UP9971, UT4232, UT4812, UT4812Z, IRF540, UT4957, UT6898, UT7317, UTM4953, RD00HHS1, RD00HVS1, RD01MUS1, RD01MUS2
Keywords - UT4822 MOSFET specs
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