UT4822 Datasheet and Replacement
Type Designator: UT4822
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 8.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 4.4 nS
Cossⓘ - Output Capacitance: 180 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0134 Ohm
Package: SOP-8
UT4822 substitution
UT4822 Datasheet (PDF)
ut4822.pdf

UNISONIC TECHNOLOGIES CO., LTD UT4822 Power MOSFET DUAL N-CHANNEL ENHANCEMENT MODE DESCRIPTION The UT4822 can provide excellent RDS(ON) and low gate charge by using advanced trench technology. The UT4822 is suitable for using as a load switch or in PWM applications. FEATURES * 30V/8.5A * Low RDS(ON) * Reliable and Rugged SYMBOL (7) (8) (5) (6)D1 D2(2) (4)
Datasheet: 12NN10 , 2N7002ZDW , UD9926 , UM6K1N , UP9971 , UT4232 , UT4812 , UT4812Z , IRF540N , UT4957 , UT6898 , UT7317 , UTM4953 , RD00HHS1 , RD00HVS1 , RD01MUS1 , RD01MUS2 .
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