All MOSFET. UT4957 Datasheet

 

UT4957 Datasheet and Replacement


   Type Designator: UT4957
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 7.7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 530 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
   Package: SOP-8
 

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UT4957 Datasheet (PDF)

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UT4957

UNISONIC TECHNOLOGIES CO., LTD UT4957 Power MOSFET P-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UT4957 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)

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UT4957

SUT495JEpitaxial planar NPN silicon transistorDescription Complex type bipolar transistor Feature Small package save PCB area Reduce quantity of parts and mounting cost Two 2SC5343 chips in SOT-363 package Package : SOT-363 Ordering Information Type NO. Marking Package Code SUT495J SOT-363 FX : Year & Week Code Equivalent circuit & PIN Co

Datasheet: 2N7002ZDW , UD9926 , UM6K1N , UP9971 , UT4232 , UT4812 , UT4812Z , UT4822 , 50N06 , UT6898 , UT7317 , UTM4953 , RD00HHS1 , RD00HVS1 , RD01MUS1 , RD01MUS2 , RD02MUS1 .

History: TJ100F04M3L

Keywords - UT4957 MOSFET datasheet

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