UT4957 MOSFET. Datasheet pdf. Equivalent
Type Designator: UT4957
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 7.7 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 27 nC
trⓘ - Rise Time: 11 nS
Cossⓘ - Output Capacitance: 530 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
Package: SOP-8
UT4957 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
UT4957 Datasheet (PDF)
ut4957.pdf
UNISONIC TECHNOLOGIES CO., LTD UT4957 Power MOSFET P-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UT4957 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)
sut495j.pdf
SUT495JEpitaxial planar NPN silicon transistorDescription Complex type bipolar transistor Feature Small package save PCB area Reduce quantity of parts and mounting cost Two 2SC5343 chips in SOT-363 package Package : SOT-363 Ordering Information Type NO. Marking Package Code SUT495J SOT-363 FX : Year & Week Code Equivalent circuit & PIN Co
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: FDD6512A
History: FDD6512A
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