All MOSFET. UT6898 Datasheet

 

UT6898 Datasheet and Replacement


   Type Designator: UT6898
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 9.4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 440 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
   Package: SOP-8
 

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UT6898 Datasheet (PDF)

 ..1. Size:194K  utc
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UT6898

UNISONIC TECHNOLOGIES CO., LTD UT6898 Power MOSFET N-CHANNEL ENHANCEMENT DESCRIPTION The UT6898 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)

 0.1. Size:754K  cn vbsemi
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UT6898

UT6898G-S08-Rwww.VBsemi.twDual N-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.009 at VGS = 4.5 V 10 TrenchFET Power MOSFET20 15 nC 100 % UIS Tested0.012 at VGS = 2.5 V 8.0 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Set Top Box

Datasheet: UD9926 , UM6K1N , UP9971 , UT4232 , UT4812 , UT4812Z , UT4822 , UT4957 , IRFP460 , UT7317 , UTM4953 , RD00HHS1 , RD00HVS1 , RD01MUS1 , RD01MUS2 , RD02MUS1 , RD02MUS1B .

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