UT6898 Specs and Replacement

Type Designator: UT6898

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 9.4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 440 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm

Package: SOP-8

UT6898 substitution

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UT6898 datasheet

 ..1. Size:194K  utc
 ut6898.pdf pdf_icon

UT6898

UNISONIC TECHNOLOGIES CO., LTD UT6898 Power MOSFET N-CHANNEL ENHANCEMENT DESCRIPTION The UT6898 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)... See More ⇒

 0.1. Size:754K  cn vbsemi
 ut6898g-s08-r.pdf pdf_icon

UT6898

UT6898G-S08-R www.VBsemi.tw Dual N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition 0.009 at VGS = 4.5 V 10 TrenchFET Power MOSFET 20 15 nC 100 % UIS Tested 0.012 at VGS = 2.5 V 8.0 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Set Top Box ... See More ⇒

Detailed specifications: UD9926, UM6K1N, UP9971, UT4232, UT4812, UT4812Z, UT4822, UT4957, IRFP460, UT7317, UTM4953, RD00HHS1, RD00HVS1, RD01MUS1, RD01MUS2, RD02MUS1, RD02MUS1B

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.