UTM4953 Specs and Replacement

Type Designator: UTM4953

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 4.9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 340 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.053 Ohm

Package: SOP-8

UTM4953 substitution

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UTM4953 datasheet

 ..1. Size:159K  utc
 utm4953.pdf pdf_icon

UTM4953

UNISONIC TECHNOLOGIES CO., LTD UTM4953 Preliminary Power MOSFET DUAL P-CHANNEL ENHANCEMENT MODE DESCRIPTION The UTM4953 uses advanced UTC technology to provide excellent RDS(ON), low gate charge and operation with low gate SOP-8 voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)... See More ⇒

 0.1. Size:175K  utc
 utm4953l-s08-r utm4953g-s08-r.pdf pdf_icon

UTM4953

UNISONIC TECHNOLOGIES CO., LTD UTM4953 Power MOSFET DUAL P-CHANNEL ENHANCEMENT MODE DESCRIPTION The UTM4953 uses advanced UTC technology to provide excellent RDS(ON), low gate charge and operation with low gate SOP-8 voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)... See More ⇒

Detailed specifications: UP9971, UT4232, UT4812, UT4812Z, UT4822, UT4957, UT6898, UT7317, IRF640, RD00HHS1, RD00HVS1, RD01MUS1, RD01MUS2, RD02MUS1, RD02MUS1B, RD02MUS2, RD05MMP1

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