UTM4953 Datasheet and Replacement
Type Designator: UTM4953
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 4.9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 340 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.053 Ohm
Package: SOP-8
UTM4953 substitution
UTM4953 Datasheet (PDF)
utm4953.pdf
UNISONIC TECHNOLOGIES CO., LTD UTM4953 Preliminary Power MOSFET DUAL P-CHANNEL ENHANCEMENT MODE DESCRIPTION The UTM4953 uses advanced UTC technology to provide excellent RDS(ON), low gate charge and operation with low gate SOP-8voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)
utm4953l-s08-r utm4953g-s08-r.pdf
UNISONIC TECHNOLOGIES CO., LTD UTM4953 Power MOSFET DUAL P-CHANNEL ENHANCEMENT MODE DESCRIPTION The UTM4953 uses advanced UTC technology to provide excellent RDS(ON), low gate charge and operation with low gate SOP-8voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)
Datasheet: UP9971 , UT4232 , UT4812 , UT4812Z , UT4822 , UT4957 , UT6898 , UT7317 , IRF640 , RD00HHS1 , RD00HVS1 , RD01MUS1 , RD01MUS2 , RD02MUS1 , RD02MUS1B , RD02MUS2 , RD05MMP1 .
History: IXTA1N120P
Keywords - UTM4953 MOSFET datasheet
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: IXTA1N120P
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