RD07MVS1B Specs and Replacement
Type Designator: RD07MVS1B
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
Package: SLP
RD07MVS1B substitution
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RD07MVS1B datasheet
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Detailed specifications: RD01MUS1, RD01MUS2, RD02MUS1, RD02MUS1B, RD02MUS2, RD05MMP1, RD06HHF1, RD07MVS1, IRFB4115, RD07MVS2, RD09MUP2, RD100HHF1, RD12MVP1, RD15HVF1, RD16HHF1, RD30HVF1, RD45HMF1
Keywords - RD07MVS1B MOSFET specs
RD07MVS1B cross reference
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RD07MVS1B replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
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