All MOSFET. RD100HHF1 Datasheet

 

RD100HHF1 Datasheet and Replacement


   Type Designator: RD100HHF1
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 176.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 50 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 25 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Package: CERAMIC LARGE
 

 RD100HHF1 substitution

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RD100HHF1 Datasheet (PDF)

 9.1. Size:799K  blue-rocket-elect
 brd100n03.pdf pdf_icon

RD100HHF1

BRD100N03 Rev.A .Jun. -2017 DATA SHEET / Descriptions TO-252 N MOS N-CHANNEL MOSFET in a TO-252 Plastic Package. / Features ,,Low gate charge, low crss, fast switching. / Applications DC/DC These devices are well suited for high effici

Datasheet: RD02MUS1B , RD02MUS2 , RD05MMP1 , RD06HHF1 , RD07MVS1 , RD07MVS1B , RD07MVS2 , RD09MUP2 , 2SK3878 , RD12MVP1 , RD15HVF1 , RD16HHF1 , RD30HVF1 , RD45HMF1 , RD60HUF1 , RD70HHF1 , RD70HVF1 .

History: SI5515CDC | SJMN850R80ZF

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