All MOSFET. RD100HHF1 Datasheet

 

RD100HHF1 Datasheet and Replacement


   Type Designator: RD100HHF1
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 176.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 50 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 25 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Package: CERAMIC LARGE
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RD100HHF1 Datasheet (PDF)

 9.1. Size:799K  blue-rocket-elect
 brd100n03.pdf pdf_icon

RD100HHF1

BRD100N03 Rev.A .Jun. -2017 DATA SHEET / Descriptions TO-252 N MOS N-CHANNEL MOSFET in a TO-252 Plastic Package. / Features ,,Low gate charge, low crss, fast switching. / Applications DC/DC These devices are well suited for high effici

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: TJ40S04M3L | TF3407 | TK10P60W | R8002ANJ | TK13A25D

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