RD100HHF1 Specs and Replacement

Type Designator: RD100HHF1

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 176.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 50 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 25 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

Package: CERAMIC LARGE

RD100HHF1 substitution

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RD100HHF1 datasheet

 9.1. Size:799K  blue-rocket-elect
 brd100n03.pdf pdf_icon

RD100HHF1

BRD100N03 Rev.A .Jun. -2017 DATA SHEET / Descriptions TO-252 N MOS N-CHANNEL MOSFET in a TO-252 Plastic Package. / Features , , Low gate charge, low crss, fast switching. / Applications DC/DC These devices are well suited for high effici... See More ⇒

Detailed specifications: RD02MUS1B, RD02MUS2, RD05MMP1, RD06HHF1, RD07MVS1, RD07MVS1B, RD07MVS2, RD09MUP2, 8205A, RD12MVP1, RD15HVF1, RD16HHF1, RD30HVF1, RD45HMF1, RD60HUF1, RD70HHF1, RD70HVF1

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.