SIF1N65C Specs and Replacement

Type Designator: SIF1N65C

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 28 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 15 Ohm

Package: TO-251 TO-251S TO-92 TO-252

SIF1N65C substitution

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SIF1N65C datasheet

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SIF1N65C

Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification N- MOS / N-CHANNEL POWER MOSFET SIF1N65C N- MOS / N-CHANNEL POWER MOSFET SIF1N65C N- MOS / N-CHANN... See More ⇒

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SIF1N65C

Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification N- MOS / N-CHANNEL POWER MOSFET SIF1N60C N- MOS / N-CHANNEL POWER MOSFET SIF1N60C N- MOS / N-CHANN... See More ⇒

Detailed specifications: SIF10N70C, SIF110N060, SIF12N60C, SIF12N65C, SIF13N50C, SIF160N040, SIF18N65C, SIF1N60C, AON7410, SIF2N60C, SIF2N60D, SIF2N65C, SIF2N65D, SIF2N70D, SIF4N60C, SIF4N60D, SIF4N65C

Keywords - SIF1N65C MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.