MBNP2026G6 Specs and Replacement

Type Designator: MBNP2026G6

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 0.1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 35 nS

Cossⓘ - Output Capacitance: 7.3 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 3.4 Ohm

Package: TSOP-6

MBNP2026G6 substitution

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MBNP2026G6 datasheet

 ..1. Size:317K  cystek
mbnp2026g6.pdf pdf_icon

MBNP2026G6

Spec. No. C197G6 Issued Date 2011.01.20 CYStech Electronics Corp. Revised Date Page No. 1/10 N- Channel Enhancement mode MOSFET AND PNP BJT Complex Device MBNP2026G6 Description The MBNP2026G6 consists of a N-channel enhancement-mode MOSFET and a PNP BJT in a single TSOP-6 package, providing the designer with the best combination of fast switching, ruggedized device ... See More ⇒

 8.1. Size:316K  cystek
mbnp2074g6.pdf pdf_icon

MBNP2026G6

Spec. No. C196G6 Issued Date 2011.01.20 CYStech Electronics Corp. Revised Date Page No. 1/10 N- Channel Enhancement mode MOSFET AND PNP BJT Complex Device MBNP2074G6 Description The MBNP2074G6 consists of a N-channel enhancement-mode MOSFET and a PNP BJT in a single TSOP-6 package, providing the designer with the best combination of fast switching, ruggedized device ... See More ⇒

Detailed specifications: 2SK3018S3, 2SK3019C3, 2SK3541Y3, BSS123N3, BSS138C3, BSS84KS3, BSS84N3, BSS84S6R, 75N75, MBNP2074G6, MEN09N03BJ3, MEP4435Q8, MSFA0M02X8, MTA06N03J3, MTA06N03NJ3, MTA090P02J3, MTA17A02CDN6

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