MBNP2026G6 Specs and Replacement
Type Designator: MBNP2026G6
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 0.1 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 35 nS
Cossⓘ - Output Capacitance: 7.3 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 3.4 Ohm
Package: TSOP-6
MBNP2026G6 substitution
- MOSFET ⓘ Cross-Reference Search
MBNP2026G6 datasheet
mbnp2026g6.pdf
Spec. No. C197G6 Issued Date 2011.01.20 CYStech Electronics Corp. Revised Date Page No. 1/10 N- Channel Enhancement mode MOSFET AND PNP BJT Complex Device MBNP2026G6 Description The MBNP2026G6 consists of a N-channel enhancement-mode MOSFET and a PNP BJT in a single TSOP-6 package, providing the designer with the best combination of fast switching, ruggedized device ... See More ⇒
mbnp2074g6.pdf
Spec. No. C196G6 Issued Date 2011.01.20 CYStech Electronics Corp. Revised Date Page No. 1/10 N- Channel Enhancement mode MOSFET AND PNP BJT Complex Device MBNP2074G6 Description The MBNP2074G6 consists of a N-channel enhancement-mode MOSFET and a PNP BJT in a single TSOP-6 package, providing the designer with the best combination of fast switching, ruggedized device ... See More ⇒
Detailed specifications: 2SK3018S3, 2SK3019C3, 2SK3541Y3, BSS123N3, BSS138C3, BSS84KS3, BSS84N3, BSS84S6R, 75N75, MBNP2074G6, MEN09N03BJ3, MEP4435Q8, MSFA0M02X8, MTA06N03J3, MTA06N03NJ3, MTA090P02J3, MTA17A02CDN6
Keywords - MBNP2026G6 MOSFET specs
MBNP2026G6 cross reference
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