MEN09N03BJ3 Specs and Replacement

Type Designator: MEN09N03BJ3

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 60 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 50 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 6 nS

Cossⓘ - Output Capacitance: 176 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm

Package: TO-252

MEN09N03BJ3 substitution

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MEN09N03BJ3 datasheet

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MEN09N03BJ3

Spec. No. C430J3 Issued Date 2008.10.20 CYStech Electronics Corp. Revised Date 2013.12.26 Page No. 1/8 N-Channel Logic Level Enhancement Mode Power MOSFET BVDSS 30V MEN09N03BJ3 ID 50A RDSON(MAX) 9m Features VDS=30V, ID=50A, RDS(ON)=9m Low Gate Charge Repetitive Avalanche Rated Simple Drive Requirement Fast Switching Characteristic RoHS... See More ⇒

Detailed specifications: 2SK3541Y3, BSS123N3, BSS138C3, BSS84KS3, BSS84N3, BSS84S6R, MBNP2026G6, MBNP2074G6, IRFB31N20D, MEP4435Q8, MSFA0M02X8, MTA06N03J3, MTA06N03NJ3, MTA090P02J3, MTA17A02CDN6, MTA17A02CDV8, MTA25N02J3

Keywords - MEN09N03BJ3 MOSFET specs

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