All MOSFET. MEN09N03BJ3 Datasheet

 

MEN09N03BJ3 Datasheet and Replacement


   Type Designator: MEN09N03BJ3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 60 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id| ⓘ - Maximum Drain Current: 50 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 6 nS
   Cossⓘ - Output Capacitance: 176 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm
   Package: TO-252
 

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MEN09N03BJ3 Datasheet (PDF)

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MEN09N03BJ3

Spec. No. : C430J3 Issued Date : 2008.10.20 CYStech Electronics Corp.Revised Date :2013.12.26 Page No. : 1/8 N-Channel Logic Level Enhancement Mode Power MOSFET BVDSS 30VMEN09N03BJ3 ID 50ARDSON(MAX) 9mFeatures VDS=30V, ID=50A, RDS(ON)=9m Low Gate Charge Repetitive Avalanche Rated Simple Drive Requirement Fast Switching Characteristic RoHS

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , AON7506 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: AP15P10GP-HF

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