MEP4435Q8 Specs and Replacement

Type Designator: MEP4435Q8

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 13 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 323 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0093 Ohm

Package: SOP-8

MEP4435Q8 substitution

- MOSFET ⓘ Cross-Reference Search

 

MEP4435Q8 datasheet

 ..1. Size:392K  cystek
 mep4435q8.pdf pdf_icon

MEP4435Q8

Spec. No. C391Q8-A Issued Date 2008.07.17 CYStech Electronics Corp. Revised Date 2014.03.05 Page No. 1/9 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS -30V MEP4435Q8 ID -13A 9.3m (typ.) RDSON(MAX)@VGS=-10V, ID=-10A 14m (typ.) RDSON(MAX)@VGS=-5V, ID=-7A 15m (typ.) RDSON(MAX)@VGS=-4.5V, ID=-5A Description The MEP4435Q8 is a P-channel enhancement-mode MOSFE... See More ⇒

Detailed specifications: BSS123N3, BSS138C3, BSS84KS3, BSS84N3, BSS84S6R, MBNP2026G6, MBNP2074G6, MEN09N03BJ3, STP65NF06, MSFA0M02X8, MTA06N03J3, MTA06N03NJ3, MTA090P02J3, MTA17A02CDN6, MTA17A02CDV8, MTA25N02J3, MTA340N02N3

Keywords - MEP4435Q8 MOSFET specs

 MEP4435Q8 cross reference

 MEP4435Q8 equivalent finder

 MEP4435Q8 pdf lookup

 MEP4435Q8 substitution

 MEP4435Q8 replacement

Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.