All MOSFET. MSFA0M02X8 Datasheet

 

MSFA0M02X8 Datasheet and Replacement


   Type Designator: MSFA0M02X8
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 30 nS
   Cossⓘ - Output Capacitance: 386 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.085 Ohm
   Package: DFN3X2
 

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MSFA0M02X8 Datasheet (PDF)

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MSFA0M02X8

Spec. No. : C724X8 Issued Date : 2009.06.12 CYStech Electronics Corp.Revised Date : Page No. : 1/9 P-Channel Logic Level Enhancement Mode MOSFET with Schottky Diode MSFA0M02X8 MOSFET product Summary Schottky Product Summary BVDSS -20V VKA 20VRDSON(MAX) 100m VF 0.46VIF 1AID -3AFeatures Simple drive requirement Low on-resistance Fast switching speed

Datasheet: BSS138C3 , BSS84KS3 , BSS84N3 , BSS84S6R , MBNP2026G6 , MBNP2074G6 , MEN09N03BJ3 , MEP4435Q8 , NCEP15T14 , MTA06N03J3 , MTA06N03NJ3 , MTA090P02J3 , MTA17A02CDN6 , MTA17A02CDV8 , MTA25N02J3 , MTA340N02N3 , MTA55N02N3 .

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