MSFA0M02X8 Specs and Replacement

Type Designator: MSFA0M02X8

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 30 nS

Cossⓘ - Output Capacitance: 386 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.085 Ohm

Package: DFN3X2

MSFA0M02X8 substitution

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MSFA0M02X8 datasheet

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 msfa0m02x8.pdf pdf_icon

MSFA0M02X8

Spec. No. C724X8 Issued Date 2009.06.12 CYStech Electronics Corp. Revised Date Page No. 1/9 P-Channel Logic Level Enhancement Mode MOSFET with Schottky Diode MSFA0M02X8 MOSFET product Summary Schottky Product Summary BVDSS -20V VKA 20V RDSON(MAX) 100m VF 0.46V IF 1A ID -3A Features Simple drive requirement Low on-resistance Fast switching speed ... See More ⇒

Detailed specifications: BSS138C3, BSS84KS3, BSS84N3, BSS84S6R, MBNP2026G6, MBNP2074G6, MEN09N03BJ3, MEP4435Q8, IRF1405, MTA06N03J3, MTA06N03NJ3, MTA090P02J3, MTA17A02CDN6, MTA17A02CDV8, MTA25N02J3, MTA340N02N3, MTA55N02N3

Keywords - MSFA0M02X8 MOSFET specs

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