MTA17A02CDN6 Specs and Replacement

Type Designator: MTA17A02CDN6

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 670 nS

Cossⓘ - Output Capacitance: 75 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0161 Ohm

Package: SOT-26

MTA17A02CDN6 substitution

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MTA17A02CDN6 datasheet

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MTA17A02CDN6

Spec. No. C930N6 Issued Date 2013.11.06 CYStech Electronics Corp. Revised Date Page No. 1/8 Dual N-Channel Enhancement Mode MOSFET MTA17A02CDN6 BVDSS 20V ID VGS=4.5V 6A 16.1m VGS=4.5V, ID=6A Features VGS=4.0V, ID=6A 16.7m Simple drive requirement RDSON (TYP.) VGS=3.0V, ID=6A 18.4 m Low on-resistance VGS=2.5V, ID=6A 20.2 m Small package... See More ⇒

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MTA17A02CDN6

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Detailed specifications: MBNP2026G6, MBNP2074G6, MEN09N03BJ3, MEP4435Q8, MSFA0M02X8, MTA06N03J3, MTA06N03NJ3, MTA090P02J3, IRF830, MTA17A02CDV8, MTA25N02J3, MTA340N02N3, MTA55N02N3, MTA65N15H8, MTA65N20H8, MTA90N03ZN3, MTB02N03H8

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