MTA340N02N3 Specs and Replacement

Type Designator: MTA340N02N3

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.38 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 0.82 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 21 nS

Cossⓘ - Output Capacitance: 11 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.299 Ohm

Package: SOT-23

MTA340N02N3 substitution

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MTA340N02N3 datasheet

 ..1. Size:314K  cystek
 mta340n02n3.pdf pdf_icon

MTA340N02N3

Spec. No. C915N3 CYStech Electronics Corp. Issued Date 2013.10.08 Revised Date Page No. 1/8 20V N-Channel Enhancement Mode MOSFET BVDSS 20V MTA340N02N3 ID 820mA RDSON@VGS=4.5V, ID=650mA 299m (typ) RDSON@VGS=2.5V,ID=500mA 541m (typ) RDSON@VGS=1.8V,ID=200mA 1.05 (typ) Features Simple drive requirement Small package outline Pb-free lead platin... See More ⇒

 5.1. Size:554K  cystek
 mta340n02kc3.pdf pdf_icon

MTA340N02N3

Spec. No. C915C3 CYStech Electronics Corp. Issued Date 2014.08.22 Revised Date Page No. 1/8 20V N-Channel Enhancement Mode MOSFET MTA340N02KC3 BVDSS 20V ID @VGS=4.5V 700mA RDSON@VGS=4.5V, ID=650mA 299m (typ) RDSON@VGS=2.5V,ID=500mA 550m (typ) Features RDSON@VGS=1.8V,ID=200mA 1.05 (typ) Simple drive requirement Small package outline Pb... See More ⇒

Detailed specifications: MEP4435Q8, MSFA0M02X8, MTA06N03J3, MTA06N03NJ3, MTA090P02J3, MTA17A02CDN6, MTA17A02CDV8, MTA25N02J3, IRFB7545, MTA55N02N3, MTA65N15H8, MTA65N20H8, MTA90N03ZN3, MTB02N03H8, MTB02N03J3, MTB02N03Q8, MTB030N04N3

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