MTA55N02N3 Specs and Replacement

Type Designator: MTA55N02N3

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.38 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 3.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7.4 nS

Cossⓘ - Output Capacitance: 61 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.029 Ohm

Package: SOT-23

MTA55N02N3 substitution

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MTA55N02N3 datasheet

 ..1. Size:305K  cystek
 mta55n02n3.pdf pdf_icon

MTA55N02N3

Spec. No. C323N3 Issued Date 2013.12.27 CYStech Electronics Corp. Revised Date Page No. 1/8 20V N-CHANNEL Enhancement Mode MOSFET BVDSS 20V MTA55N02N3 ID 3.6A 29m (typ.) RDSON(MAX)@VGS=4.5V, ID=3.6A 39m (typ.) RDSON(MAX)@VGS=2.5V, ID=3.1A Features Simple drive requirement Small package outline Capable of 2.5V gate drive Pb-free lead platin... See More ⇒

 8.1. Size:367K  cystek
 mta55n20j3.pdf pdf_icon

MTA55N02N3

Spec. No. C976J3 Issued Date 2014.09.15 CYStech Electronics Corp. Revised Date Page No. 1/9 N -Channel Enhancement Mode Power MOSFET BVDSS 200V MTA55N20J3 ID@VGS=10V 25A VGS=10V, ID=11A 52m RDSON(TYP) VGS=4.5V, ID=5A 52m Features Low Gate Charge Simple Drive Requirement Pb-free lead plating package Equivalent Circuit Outline TO-252(DPAK) ... See More ⇒

 9.1. Size:46K  diodes
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MTA55N02N3

SOT SI I O A A TA DI O T A SISTO S TA 6 ISS A A Y 6 T i I T I D T I T T T T SOT A SO T A I ATI S T T T IT II V I V V 8 II i V I V V 8 i V I V V i II I Di i i T i T T T T I A HA A T ISTI S a Ta T T T I I IT DITI II i V 8 V I I V I i V V I I V I II i I V V II I V 8 V I V V I i I V V T i I V V ... See More ⇒

Detailed specifications: MSFA0M02X8, MTA06N03J3, MTA06N03NJ3, MTA090P02J3, MTA17A02CDN6, MTA17A02CDV8, MTA25N02J3, MTA340N02N3, AON7403, MTA65N15H8, MTA65N20H8, MTA90N03ZN3, MTB02N03H8, MTB02N03J3, MTB02N03Q8, MTB030N04N3, MTB032P06V8

Keywords - MTA55N02N3 MOSFET specs

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