MTA55N02N3 - Даташиты. Аналоги. Основные параметры

Spec. No. : C323N3 Issued Date : 2013.12.27 CYStech Electronics Corp.Revised Date : Page No. : 1/8 20V N-CHANNEL Enhancement Mode MOSFET BVDSS 20VMTA55N02N3 ID 3.6A29m(typ.)RDSON(MAX)@VGS=4.5V, ID=3.6A 39m(typ.)RDSON(MAX)@VGS=2.5V, ID=3.1A Features Simple drive requirement Small package outline Capable of 2.5V gate drive Pb-free lead platin

Spec. No. : C976J3 Issued Date : 2014.09.15 CYStech Electronics Corp.Revised Date : Page No. : 1/9 N -Channel Enhancement Mode Power MOSFET BVDSS 200VMTA55N20J3 ID@VGS=10V 25AVGS=10V, ID=11A 52m RDSON(TYP) VGS=4.5V, ID=5A 52m Features Low Gate Charge Simple Drive Requirement Pb-free lead plating package Equivalent Circuit Outline TO-252(DPAK)

SOT SI I O A A TA DI O T A SISTO S TA 6ISS A A Y 6 T i I T I D T I T T T T SOT A SO T A I ATI S T T T IT II V I V V8 II i V I V V8 i V I V V i II I Di i i T i T T T T I A HA A T ISTI S a Ta T T T I I IT DITI II i V 8 V I I V I i V V I I V I II i I V V II I V 8 V I V V I i I V V T i I V V