All MOSFET. MTA65N20H8 Datasheet

 

MTA65N20H8 Datasheet and Replacement


   Type Designator: MTA65N20H8
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 107 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.4 V
   |Id|ⓘ - Maximum Drain Current: 24 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 60 nC
   trⓘ - Rise Time: 50 nS
   Cossⓘ - Output Capacitance: 161 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.074 Ohm
   Package: DFN5X6
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MTA65N20H8 Datasheet (PDF)

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MTA65N20H8

Spec. No. : C866H8 Issued Date : 2014.02.10 CYStech Electronics Corp.Revised Date : Page No. : 1/10 N-Channel Enhancement Mode Power MOSFET BVDSS 200VMTA65N20H8ID @VGS=10V 24A74m VGS=10V, ID=11A RDSON(TYP) 74m VGS=5V, ID=5A Description The MTA65N20H8 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, r

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MTA65N20H8

Spec. No. : C739H8 Issued Date : 2014.02.11 CYStech Electronics Corp.Revised Date : Page No. : 1/10 N-Channel Enhancement Mode Power MOSFET BVDSS 150VMTA65N15H8ID @VGS=10V 20A60m VGS=10V, ID=15A 59m RDSON(TYP) VGS=5V, ID=10A 60m VGS=3V, ID=3A Description The MTA65N15H8 is a N-channel enhancement-mode MOSFET, providing the designer with the best combinati

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: 2SK3412D | SVG104R0NT | 1N65A | IRF6644

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