All MOSFET. MTA90N03ZN3 Datasheet

 

MTA90N03ZN3 Datasheet and Replacement


   Type Designator: MTA90N03ZN3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.38 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.6 V
   |Id| ⓘ - Maximum Drain Current: 3.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 8 nC
   tr ⓘ - Rise Time: 35 nS
   Cossⓘ - Output Capacitance: 50 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.13 Ohm
   Package: SOT-23
 

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MTA90N03ZN3 Datasheet (PDF)

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MTA90N03ZN3

Spec. No. : C831N3 CYStech Electronics Corp. Issued Date : 2012.07.04 Revised Date : 2012.12.28 Page No. : 1/8 30V N-Channel Enhancement Mode MOSFET MTA90N03ZN3 BVDSS 30VID 3.2ARDSON@VGS=4.5V, ID=2.5A 130m(typ) Features RDSON@VGS=3V,ID=2.5A 144m(typ) Simple drive requirement. Small package outline. ESD protected. Pb-free lead plating and halogen-

Datasheet: MTA090P02J3 , MTA17A02CDN6 , MTA17A02CDV8 , MTA25N02J3 , MTA340N02N3 , MTA55N02N3 , MTA65N15H8 , MTA65N20H8 , MMD60R360PRH , MTB02N03H8 , MTB02N03J3 , MTB02N03Q8 , MTB030N04N3 , MTB032P06V8 , MTB03N03H8 , MTB04N03AQ8 , MTB04N03E3 .

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