MTA90N03ZN3 Specs and Replacement

Type Designator: MTA90N03ZN3

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.38 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 3.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 35 nS

Cossⓘ - Output Capacitance: 50 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.13 Ohm

Package: SOT-23

MTA90N03ZN3 substitution

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MTA90N03ZN3 datasheet

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 mta90n03zn3.pdf pdf_icon

MTA90N03ZN3

Spec. No. C831N3 CYStech Electronics Corp. Issued Date 2012.07.04 Revised Date 2012.12.28 Page No. 1/8 30V N-Channel Enhancement Mode MOSFET MTA90N03ZN3 BVDSS 30V ID 3.2A RDSON@VGS=4.5V, ID=2.5A 130m (typ) Features RDSON@VGS=3V,ID=2.5A 144m (typ) Simple drive requirement. Small package outline. ESD protected. Pb-free lead plating and halogen-... See More ⇒

Detailed specifications: MTA090P02J3, MTA17A02CDN6, MTA17A02CDV8, MTA25N02J3, MTA340N02N3, MTA55N02N3, MTA65N15H8, MTA65N20H8, RU7088R, MTB02N03H8, MTB02N03J3, MTB02N03Q8, MTB030N04N3, MTB032P06V8, MTB03N03H8, MTB04N03AQ8, MTB04N03E3

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