FSF055D Datasheet. Specs and Replacement

Type Designator: FSF055D  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 25 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm

Package: TO254AA

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FSF055D datasheet

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FSF055D

FSF055D, FSF055R 25A, 60V, 0.020 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description 25A, 60V, rDS(ON) = 0.020 The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specif- Total Dose ically designed for commercial and military space applica- - Meets Pre-RAD Specifications to 100K RAD (S... See More ⇒

Detailed specifications: FRX130H1, FRX130H2, FRX130H3, FRX130H4, FRX130R1, FRX130R2, FRX130R3, FRX130R4, SI2302, FSF055R, FSF150D, FSF150R, FSF250D, FSF250R, FSF254D, FSF254R, FSF450D

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