FSF055D Specs and Replacement
Type Designator: FSF055D
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 25 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
Package: TO254AA
FSF055D substitution
FSF055D datasheet
fsf055.pdf
FSF055D, FSF055R 25A, 60V, 0.020 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description 25A, 60V, rDS(ON) = 0.020 The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specif- Total Dose ically designed for commercial and military space applica- - Meets Pre-RAD Specifications to 100K RAD (S... See More ⇒
Detailed specifications: FRX130H1 , FRX130H2 , FRX130H3 , FRX130H4 , FRX130R1 , FRX130R2 , FRX130R3 , FRX130R4 , K2611 , FSF055R , FSF150D , FSF150R , FSF250D , FSF250R , FSF254D , FSF254R , FSF450D .
History: 2SK3135
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