All MOSFET. FSF055R Datasheet

 

FSF055R Datasheet and Replacement


   Type Designator: FSF055R
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 25 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
   Package: TO254AA
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FSF055R Datasheet (PDF)

 8.1. Size:54K  intersil
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FSF055R

FSF055D, FSF055R25A, 60V, 0.020 Ohm, Rad Hard,SEGR Resistant, N-Channel Power MOSFETsJune 1998Features Description 25A, 60V, rDS(ON) = 0.020 The Discrete Products Operation of Intersil Corporation hasdeveloped a series of Radiation Hardened MOSFETs specif- Total Doseically designed for commercial and military space applica-- Meets Pre-RAD Specifications to 100K RAD (S

Datasheet: FRX130H2 , FRX130H3 , FRX130H4 , FRX130R1 , FRX130R2 , FRX130R3 , FRX130R4 , FSF055D , IRFP064N , FSF150D , FSF150R , FSF250D , FSF250R , FSF254D , FSF254R , FSF450D , FSF450R .

History: TPCP8001-H | BRCS200P03DP | IRFB3004GPBF | CS2N65A3 | SWU11N65D | LKK47-06C5 | TSM4424CS

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